BAP51-02,115 NXP Semiconductors, BAP51-02,115 Datasheet - Page 3

• Manufacturer Part Number: BAP51-02,115
• Description: DIODE PIN GP 60V 50MA SOD-523
• Manufacturer: NXP Semiconductors

Specifications of BAP51-02,115

• Package / Case: SC-79, SOD-523
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 60V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
• Resistance @ If, F: 2.5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 715mW
• Configuration: Single
• Reverse Voltage: 60 V
• Forward Continuous Current: 50 mA
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.35 pF at 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 2.5 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 9 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 715 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1921-2; 934055889115; BAP51-02 T/R

NXP Semiconductors
GRAPHICAL DATA
handbook, halfpage
handbook, halfpage
General purpose PIN diode
|
f = 100 MHz; T
Fig.2
s 21
(1) I
Diode inserted in series with a 50
analyzer Tee network.
T
Fig.4
(dB)
amb
|
( )
0.5
1.5
2.5
r D
2
F
10
= 25 C.
0
1
2
5
2
1
= 10 mA.
0.5
10
Forward resistance as a function of forward
current; typical values.
Insertion loss ( s
function of frequency; typical values.
1
j
= 25 C.
1
(2) I
1.5
F
= 1 mA.
(1)
21
1
2
stripline circuit and biased via the
(2)
) of the diode as a
2
(3)
I F (mA)
(3) I
2.5
F
f (GHz)
= 0.5 mA.
MGT264
MGS322
3
10
Rev. 03 - 2 January 2008
handbook, halfpage
handbook, halfpage
|
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50
T
Fig.5
s 21
(dB)
(fF)
amb
C d
500
400
300
200
100
|
2
10
15
20
25
= 25 C.
0
5
0
0.5
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation ( s
frequency; typical values.
j
= 25 C.
1
4
21
1.5
2
8
) of the diode as a function of
12
2
Product specification
2.5
BAP51-02
16
V R (V)
f (GHz)
stripline circuit.
MGS323
MGT265
20
3 of 6
3