BAP64-06,215 NXP Semiconductors, BAP64-06,215 Datasheet - Page 4

• Manufacturer Part Number: BAP64-06,215
• Description: DIODE PIN 175V 100MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAP64-06,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Anode
• Voltage - Peak Reverse (max): 175V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Dual Common Anode
• Reverse Voltage: 175 V
• Forward Continuous Current: 100 mA
• Frequency Range: SHF
• Carrier Life: 1.55 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.35 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.35 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 40 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1935-2; 934055977215; BAP64-06 T/R

NXP Semiconductors
GRAPHICAL DATA
2001 Feb 27
handbook, halfpage
handbook, halfpage
Silicon PIN diode
f = 100 MHz; T
Fig.2
(1) I
(2) I
Diode inserted in series with a 50  stripline circuit
and biased via the analyzer Tee network; T
Fig.4
s 21
(dB)
(Ω)
10
r D
10
−1
−2
−3
−4
−5
F
F
10
2
−1
10
0
1
= 100 mA.
= 10 mA.
2
0.5
−1
Forward resistance as a function of forward
current; typical values.
Insertion loss (s
function of frequency; typical values.
j
= 25 C.
1
1
1.5
(1)
(3)
(4)
21
(3) I
(4) I

2
(2)
) of the diode as a
2
F
F
= 1 mA.
= 0.5 mA.
10
amb
= 25 C.
I F (mA)
2.5
f (GHz)
MCD777
MCD779
10
3
2
4
handbook, halfpage
handbook, halfpage
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit;
T
Fig.5
amb
s 21
(dB)
(fF)
C d
600
400
200
−10
−20
−30
= 25 C.
2
0
0
0.5
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (s
frequency; typical values.
j
= 25 C.
4
1
21
1.5

2
8
) of the diode as a function of
12
2
Product specification
2.5
16
BAP64-06
V R (V)
f (GHz)
MCD778
MCD780
20
3