HSMS-2805-TR1G Avago Technologies US Inc., HSMS-2805-TR1G Datasheet - Page 3

DIODE SCHOTTKY RF 70V 1A SOT-143

HSMS-2805-TR1G

Manufacturer Part Number
HSMS-2805-TR1G
Description
DIODE SCHOTTKY RF 70V 1A SOT-143
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HSMS-2805-TR1G

Package / Case
SOT-143, SOT-143B, TO-253AA
Diode Type
Schottky - 2 Independent
Voltage - Peak Reverse (max)
70V
Current - Max
1A
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Resistance @ If, F
35 Ohm @ 5mA, 1MHz
Product
Schottky Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
1 A
Max Surge Current
1 A
Configuration
Dual Parallel
Forward Voltage Drop
1 V @ 0.015 A
Maximum Reverse Leakage Current
0.2 uA @ 50 V
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Capacitance Ct
2pF
Diode Case Style
SOT-143
Breakdown Voltage
70V
Forward Voltage
400mV
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
516-1812-2
HSMS-2805-TR1G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HSMS-2805-TR1G
Manufacturer:
AVAGO
Quantity:
1 300
Part Number:
HSMS-2805-TR1G
Manufacturer:
AVAGO
Quantity:
80
Part Number:
HSMS-2805-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing
accurate capacitance measurement of each branch or
each diode. The conditions are: 20 mV R.M.S. voltage at 1
MHz. Avago defines this measurement as “CM”, and it is
equivalent to the capaci tance of the diode by itself. The
equivalent diagonal and adja cent capacitances can then
be calculated by the formulas given below.
In a quad, the diagonal capaci tance is the capacitance
between points A and B as shown in the figure below.
The diagonal capacitance is calculated using the follow-
ing formula
Linear Equivalent Circuit, Diode Chip
3
R
C
R
where
I
I
T = temperature, K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-280x product,
please refer to Application Note AN1124.
b
s
C
S
j
j
= saturation current (see table of SPICE parameters)
= externally applied bias current in amps
DIAGONAL
=
= series resistance (see Table of SPICE parameters)
= junction capacitance (see Table of SPICE parameters)
8.33 X 10
I
b
R
+ I
S
= _______ + _______
s
-5
C
C
1
nT
1
+ C
x C
2
2
R
C
C
j
C
3
3
j
+ C
x C
4
4
SPICE Parameters
The equivalent adjacent capacitance is the capacitance
between points A and C in the figure below. This capaci-
tance is calculated using the following formula
This information does not apply to cross-over quad
diodes.
Parameter
B
C
E
I
I
N
R
P
P
M
C
BV
S
G
S
B
T
V
J0
ADJACENT
C
= C
Units
V
pF
eV
A
A
Ω
V
1
+ ____________
–– + –– + ––
C
C
C
1
1
2
2
HSMS-280x
75
1.6
0.69
E-5
3.00E-08
1.08
30
0.65
2
0.5
C
1
1
3
C
1
4
C
C
3
4
A
B

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