BAP70-05,215 NXP Semiconductors, BAP70-05,215 Datasheet - Page 5

• Manufacturer Part Number: BAP70-05,215
• Description: DIODE PIN 50V 100MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAP70-05,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.3pF @ 20V, 1MHz
• Resistance @ If, F: 1.9 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Dual Common Cathode
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Carrier Life: 1.25 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.3 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.9 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 100 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1942-2; 934057581215; BAP70-05 T/R

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 8.
BAP70-05_3
Product data sheet
Document ID
BAP70-05_3
Modifications:
BAP70-05_2
Modifications:
BAP70-05_1
(9397 750 12811)
Revision history
Table 7.
Acronym
PIN
SMD
RF
Release date
20070405
20061221
20040405
•
•
•
•
Table
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Figure 2 replaced
Abbreviations
6: changed I
Description
P-type, Intrinsic, N-type
Surface Mounted Device
Radio Frequency
Data sheet status
Product data sheet
Product data sheet
Product data sheet
R
Rev. 03 — 5 April 2007
maximum value from 20 nA to 100 nA
Change notice
-
-
-
BAP70-05
Supersedes
BAP70-05_2
BAP70-05_1
-
© NXP B.V. 2007. All rights reserved.
Silicon PIN diode
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