BAP65-05,215 NXP Semiconductors, BAP65-05,215 Datasheet - Page 4

• Manufacturer Part Number: BAP65-05,215
• Description: DIODE PIN 30V 100MA SOT-23
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP65-05,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.425pF @ 20V, 1MHz
• Resistance @ If, F: 350 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Carrier Life: 0.17 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.8 pF at 3 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Typical Carrier Life Time: 170ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056664215; BAP65-05 T/R; BAP65-05 T/R

NXP Semiconductors
GRAPHICAL DATA
2001 May 07
handbook, halfpage
handbook, halfpage
Silicon PIN diode
|
f = 100 MHz; T
(1) I
(2) I
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network.
T
Fig.4
s 21
(dB)
Fig.2
amb
−0.1
−0.2
−0.3
−0.4
−0.5
(Ω)
10
r D
|
2
F
F
= 25 C.
10
−1
10
0
1
= 100 mA.
= 10 mA.
0
−1
Insertion loss (s
as a function of frequency; typical values.
Forward resistance as a function of
forward current; typical values.
j
= 25 C.
(1)
(3) I
(4) I
1
1
F
F
(3)
(2)
= 5 mA.
= 1 mA.
21

2
) of the diode in on-state
(4)
10
2
I F (mA)
f (GHz)
MGW095
MGW093
10
3
2
4
handbook, halfpage
handbook, halfpage
|
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
Fig.5
(fF)
s 21
C d
(dB)
amb
1000
−10
−20
−30
−40
800
600
400
200
|
2
= 25 C.
0
0
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (s
function of frequency; typical values.
j
= 25 C.
4
21
1

2
8
) of the diode in off-state as a
12
2
Product specification
f (GHz)
BAP65-05
16
V R (V)
MGW096
MGW094
20
3