BAP70-04W,115 NXP Semiconductors, BAP70-04W,115 Datasheet - Page 2

• Manufacturer Part Number: BAP70-04W,115
• Description: DIODE PIN 50V 100MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BAP70-04W,115

• Package / Case: SC-70-3, SOT-323-3
• Diode Type: PIN - 1 Pair Series Connection
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.3pF @ 20V, 1MHz
• Resistance @ If, F: 1.9 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 260mW
• Configuration: Dual Series
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Termination Style: SMD/SMT
• Carrier Life: 1.25 us
• Forward Voltage Drop: 0.95 V
• Maximum Diode Capacitance: 0.3 pF @ 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.4 Ohms
• Maximum Series Resistance @ Minimum If: 77 Ohms
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 260 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057966115; BAP70-04W T/R; BAP70-04W T/R

NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 6.
T
BAP70-04W_2
Product data sheet
Symbol
Per diode
V
I
C
r
L
R
D
amb
L
S
F
d
= 25 C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
diode forward
resistance
charge carrier life time
series inductance
Characteristics
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Type number
BAP70-04W
Symbol
Per diode
V
I
P
T
T
Symbol
R
F
stg
j
R
tot
th(j-s)
Parameter
thermal resistance from junction to soldering point
Conditions
I
V
see
see
when switched from I
R
I
Marking codes
Limiting values
Thermal characteristics
F
F
R
L
V
V
V
I
I
I
I
= 50 mA
= 100 mA; f = 100 MHz
Parameter
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
F
F
F
F
= 100 ; measured at I
= 50 V
R
R
R
Figure
Figure
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0 V
= 1 V
= 20 V
1; f = 1 MHz
2; f = 100 MHz
Rev. 02 — 3 April 2007
F
= 10 mA to I
R
= 3 mA
Conditions
T
s
R
= 90 C
= 6 mA;
Marking code
1Np
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
65
65
BAP70-04W
Typ
0.95
-
600
430
250
77
40
5.4
1.4
1.25
1.4
© NXP B.V. 2007. All rights reserved.
Silicon PIN diode
Max
50
100
260
+150
+150
Typ
230
Max
1.1
100
-
-
300
100
50
7
1.9
-
-
Unit
V
mA
mW
C
C
Unit
K/W
Unit
V
nA
fF
fF
fF
nH
s
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