BAT17,215 NXP Semiconductors, BAT17,215 Datasheet - Page 3

• Manufacturer Part Number: BAT17,215
• Description: DIODE SCHOTTKY 4V 30MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAT17,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Current - Max: 30mA
• Voltage - Peak Reverse (max): 4V
• Capacitance @ Vr, F: 1pF @ 0V, 1MHz
• Resistance @ If, F: 15 Ohm @ 5mA, 1kHz
• Product: Schottky Diodes
• Peak Reverse Voltage: 4 V
• Forward Continuous Current: 0.03 A
• Configuration: Single
• Forward Voltage Drop: 0.6 V @ 0.01 A
• Maximum Reverse Leakage Current: 0.25 uA
• Operating Temperature Range: + 100 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933410700215::BAT17 T/R::BAT17 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise F
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
2003 Mar 25
V
I
r
C
F
R
SYMBOL
SYMBOL
amb
R
D
F
Schottky barrier diode
d
th j-a
= 25 °C unless otherwise specified.
forward voltage
reverse current
diode forward resistance
diode capacitance
noise figure
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.2
V
V
f = 1 kHz; I
f = 1 MHz; V
f = 900 MHz; note 1
note 1
3
R
R
I
I
I
F
F
F
= 3 V; see Fig.3
= 3 V; T
= 0.1 mA
= 1 mA
= 10 mA
F
CONDITIONS
amb
CONDITIONS
R
= 5 mA
= 0; see Fig.4
= 60 °C; see Fig.3
if
= 1.5 dB; f = 35 MHz.
350
450
600
0.25
1.25
15
1
8
VALUE
MAX.
Product data sheet
500
BAT17
mV
mV
mV
μA
μA
Ω
pF
dB
UNIT
UNIT
K/W