DDTD142JC-7-F Diodes Zetex, DDTD142JC-7-F Datasheet - Page 2

Trans Digital BJT NPN 500mA 3-Pin SOT-23 T/R

DDTD142JC-7-F

Manufacturer Part Number
DDTD142JC-7-F
Description
Trans Digital BJT NPN 500mA 3-Pin SOT-23 T/R
Manufacturer
Diodes Zetex
Type
NPNr
Datasheet

Specifications of DDTD142JC-7-F

Package
3SOT-23
Configuration
Single
Minimum Dc Current Gain
56@50mA@5V
Peak Dc Collector Current
500 mA
Maximum Processing Temperature
260 °C
Transistor Polarity
NPN
Dc Current Gain (min)
56
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DDTD142JC-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
DDTD142JC-7-F
Quantity:
5 000
Electrical Characteristics
Electrical Characteristics
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
* Transistor - For Reference Only
DS30399 Rev. 6 - 2
Characteristic
Characteristic
DDTD122TC
DDTD142TC
DDTD122TC
DDTD142TC
DDTD122TC
DDTD142TC
DDTD122LC
DDTD122LC
DDTD122LC
DDTD122LC
DDTD142JC
DDTD142JC
DDTD142JC
DDTD142JC
@T
@T
A
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
Symbol
Symbol
V
BV
BV
BV
V
V
V
I
I
I
CE(sat)
O(off)
h
CBO
O(on)
EBO
G
l(off)
l(on)
f
f
I
FE
CBO
CEO
EBO
T
T
l
www.diodes.com
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2 of 3
Min
Min
100
100
0.3
0.3
56
56
50
40
5
Typ
200
Typ
250
250
200
R1-Only, R2-Only Types
Max
0.3V
2.0
2.0
0.5
Max
28
13
600
600
0.5
0.5
0.5
0.3
R1, R2 Types
Unit
MHz
mA
μA
MHz
Unit
V
V
V
μA
μA
V
V
V
V
V
V
V
I
V
V
V
V
O
CC
O
O
I
CC
O
CE
I
I
I
I
V
V
I
I
V
/I
C
C
E
E
C
C
= 5V
CB
EB
CE
l
= 0.3V, I
= 0.3V, I
= 5V, I
= 50μA
= 1mA
= 50μA
= 50μA
= 50mA, I
= 5mA, V
= 50mA/2.5mA
= 10V, I
= 5V, I
= 50V, V
= 4V
= 50V
= 10V, I
O
O
O
O
= 50mA
E
Test Condition
= 100μA
I
Test Condition
CE
B
= 20mA
= 20mA
E
= 5mA, f = 100MHz
= 0V
= 2.5mA
= -5mA, f = 100MHz
= 5V
DDTD (LO-R1) C
© Diodes Incorporated

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