FMMT718TA Diodes Zetex, FMMT718TA Datasheet - Page 4

• Manufacturer Part Number: FMMT718TA
• Description: Trans GP BJT PNP 20V 1.5A 3-Pin SOT-23 T/R
• Manufacturer: Diodes Zetex
• Type: PNPr

Specifications of FMMT718TA

• Package: 3SOT-23
• Supplier Package: SOT-23
• Pin Count: 3
• Minimum Dc Current Gain: 300@10mA@2V|300@100mA@2V|150@2A@2V|35@4A@2V|15@6A@2V
• Maximum Operating Frequency: 180(Typ) MHz
• Maximum Dc Collector Current: 1.5 A
• Maximum Base Emitter Saturation Voltage: 1@50mA@1.5A V
• Maximum Collector Emitter Saturation Voltage: 0.04@10mA@0.1A|0.2@20mA@1A|0.22@50mA@1.5A V
• Maximum Collector Emitter Voltage: 20 V
• Maximum Emitter Base Voltage: 5 V
• Transistor Type: PNP
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 220mV @ 50mA, 1.5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 100mA, 2V
• Power - Max: 625mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 20V
• Collector-base Voltage(max): 20V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 1.5A
• Dc Current Gain (min): 300
• Power Dissipation: 625mW
• Frequency (max): 180MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FMMT718TR

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 3)
Collector-Emitter Saturation Voltage
(Note 3)
Base-Emitter Turn-On Voltage(Note 3)
Base-Emitter Saturation Voltage(Note 3)
Output Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
Notes:
Document Number DS31924 Rev. 2 - 2
FMMT718
3. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
Characteristic
@T
A
= 25°C unless otherwise specified
S O T 2 3 PNP S I L IC O N P O W ER (SW ITCH ING) TRAN SISTOR
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
C
I
BE(sat)
BE(on)
h
CBO
EBO
CES
t
t
f
obo
on
off
FE
T
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4 of 7
Min
300
300
150
150
-20
-20
35
15
-5
-0.81
-0.87
-130
-145
Typ
-8.8
475
450
230
180
670
-65
-55
-16
70
30
21
40
Max
-100
-100
-100
-200
-220
-1.0
-1.0
-40
30
Diodes Incorporated
A Product Line of
MHz
Unit
mV
mV
mV
 n A
nA
pF
nA
ns
ns
V
V
V
V
V
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
f = 100MHz
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CE
CB
CE
CC
= -100 µA
= -10 mA
= -100 µA
= -10mA, V
= -100mA, V
= -2A, V
= -4A, V
= -6A, V
=- 0.1A, I
= -1A, I
= -1.5A, I
= -2A, V
= -1.5A, I
= I
= -15V
=-10V, I
= -15V
= -10V. f = 1MHz
= -10V, I
= -4V
B2
Test Condition
= -20mA
B
CE
CE
CE
CE
B
= -20mA
B
B
C
C
= -10mA
= -50mA
= -2V
= -50mA
= -2V
= -2V
= -2V
=-1A
CE
FMMT718
= -50mA,
CE
© Diodes Incorporated
= -2V
= -2V
August 2009