MMBT3906-7-F Diodes Zetex, MMBT3906-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBT3906-7-F
• Description: Trans GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R
• Manufacturer: Diodes Zetex
• Type: PNPr

Specifications of MMBT3906-7-F

• Package: 3SOT-23
• Supplier Package: SOT-23
• Pin Count: 3
• Minimum Dc Current Gain: 60@0.1mA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V
• Maximum Operating Frequency: 250(Min) MHz
• Maximum Dc Collector Current: 0.2 A
• Maximum Base Emitter Saturation Voltage: 0.85@1mA@10mA|0.95@5mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@1mA@10mA|0.4@5mA@50mA V
• Maximum Collector Emitter Voltage: 40 V
• Maximum Emitter Base Voltage: 5 V
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 40V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 100
• Power Dissipation: 300mW
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Compliant

Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
MMBT3906
Document number: DS30059 Rev. 15 - 2
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
400
250
350
300
200
150
100
50
4. Short duration pulse test used to minimize self-heating effect.
0
0
25
T , AMBIENT TEMPERATURE (°C)
A
50
Characteristic
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
200
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
C
I
C
h
CEX
CBO
h
NF
2 of 4
I
h
h
h
f
t
t
BL
obo
t
t
FE
ibo
oe
ie
re
fe
T
d
s
r
f
-0.65
Min
-5.0
100
100
250
-40
-40
2.0
0.1
3.0
60
80
60
30
0.001
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.01
0.1
1
0.1
Single Non-repetitive Pulse
T = 25°C
DUT mounted onto 1xMRP
FR-4 board
A
-0.25
-0.40
-0.85
-0.95
Max
300
400
225
V , COLLECTOR-EMITTER VOLTAGE (V)
-50
-50
-50
4.5
4.0
10
12
10
60
35
35
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
x 10
Unit
MHz
nA
nA
nA
kΩ
μS
dB
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
1
-4
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CB
CE
CB
EB
CE
CE
CE
CC
BE(off)
CC
S
= -10μA, I
= -10mA, I
= -10μA, I
= -1.0mA, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -50mA, V
= -100mA, V
= -50mA, I
= -10mA, I
= -50mA, I
Pw = 100ms
= 1.0kΩ, f = 1.0kHz
= I
DC
= -30V, V
= -30V, I
= -30V, V
= 10V, I
= -5.0V, I
= -5.0V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -20V, I
= -3.0V, I
= -3.0V, I
B2
= 0.5V, I
= -1.0mA
Test Condition
10
C
E
C
B
E
B
B
B
C
B
C
C
C
EB(OFF)
EB(OFF)
= 0
= 0
= 1.0mA,
CE
= -1.0mA
= 0
= -5.0mA
= -1.0mA
= -5.0mA
= -10mA,
CE
CE
CE
CE
= 0
= -100μA,
= -10mA,
= -10mA,
B1
= -1.0V
MMBT3906
= -1.0V
= -1.0V
= -1.0V
= -1.0V
= -1.0mA
Pw = 10ms
= -3.0V
= -3.0V
© Diodes Incorporated
September 2009
E
C
100
= 0
= 0