MMDT3904-7-F Diodes Zetex, MMDT3904-7-F Datasheet - Page 2
MMDT3904-7-F
Manufacturer Part Number
MMDT3904-7-F
Description
Trans GP BJT NPN 40V 0.2A 6-Pin SOT-363 T/R
Manufacturer
Diodes Zetex
Type
NPNr
Datasheet
1.MMDT3904-7-F.pdf
(4 pages)
Specifications of MMDT3904-7-F
Package
6SOT-363
Supplier Package
SOT-363
Pin Count
6
Minimum Dc Current Gain
40@100uA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V
Maximum Operating Frequency
300(Min) MHz
Maximum Dc Collector Current
0.2 A
Maximum Base Emitter Saturation Voltage
0.85@1mA@10mA|0.95@5mA@50mA V
Maximum Collector Emitter Saturation Voltage
0.2@1mA@10mA|0.3@5mA@50mA V
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Voltage
40 V
Maximum Emitter Base Voltage
6 V
Transistor Polarity
NPN
Number Of Elements
2
Collector-emitter Voltage
40V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
100
Power Dissipation
200mW
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Package Type
SOT-363
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMDT3904-7-F
Manufacturer:
DIODES
Quantity:
87 000
Company:
Part Number:
MMDT3904-7-F
Manufacturer:
SONY
Quantity:
347
Part Number:
MMDT3904-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30088 Rev. 14 - 2
5.
Short duration pulse test used to minimize self-heating.
Characteristic
@T
A
= 25°C unless otherwise specified
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
C
h
CEX
h
NF
2 of 4
I
h
h
h
BL
f
t
t
obo
t
t
FE
ibo
oe
T
ie
re
fe
d
s
r
f
0.65
Min
100
100
300
5.0
1.0
0.5
1.0
60
40
40
70
60
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
0.20
0.30
0.85
0.95
300
400
200
4.0
8.0
8.0
5.0
50
50
10
40
35
35
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
x 10
Unit
MHz
nA
nA
pF
pF
kΩ
μS
dB
⎯
⎯
ns
ns
ns
ns
V
V
V
V
V
-4
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
EB
CE
CE
CE
CC
BE(off)
CC
S
= 10μA, I
= 10mA, I
= 10μA, I
= 1.0mA, I
= 100μA, V
= 1.0mA, V
= 10mA, V
= 50mA, V
= 100mA, V
= 50mA, I
= 10mA, I
= 50mA, I
= 1.0kΩ, f = 1.0kHz
= I
= 30V, V
= 30V, V
= 10V, I
= 5.0V, I
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 20V, I
= 3.0V, I
= 3.0V, I
B2
= - 0.5V, I
= 1.0mA
Test Condition
C
E
B
B
B
B
C
C
B
C
EB(OFF)
EB(OFF)
C
C
= 0
= 0
CE
= 1.0mA
= 5.0mA
= 1.0mA
= 5.0mA
= 1.0mA,
CE
CE
CE
= 10mA,
CE
= 0
= 100μA,
= 10mA,
= 10mA,
= 1.0V
= 1.0V
= 1.0V
B1
= 1.0V
= 1.0V
= 1.0mA
= 3.0V
= 3.0V
© Diodes Incorporated
C
E
MMDT3904
= 0
= 0