EDF1DS-E3/77 Vishay, EDF1DS-E3/77 Datasheet - Page 3

• Manufacturer Part Number: EDF1DS-E3/77
• Description: Diode Rectifier Bridge Single 200V 1A 4-Pin Case DFS T/R
• Manufacturer: Vishay

Specifications of EDF1DS-E3/77

• Package: 4Case DFS
• Peak Average Forward Current: 1@Ta=40C A
• Peak Forward Voltage: 1.05 V
• Peak Reverse Current: 5 uA
• Peak Reverse Repetitive Voltage: 200 V
• Bridge Type: Single Phase
• Configuration: Single
• Voltage - Peak Reverse (max): 200V
• Current - Dc Forward (if): 1A
• Diode Type: Single Phase
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (DFS)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 200 V
• Maximum Rms Reverse Voltage: 140 V
• Max Surge Current: 50 A
• Forward Voltage Drop: 1.05 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 8.51 mm
• Width: 6.5 mm
• Height: 3.3 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1.05V
• Diode Mounting Type: SMD
• Operating Temperature Range: -55°C To +150°C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 200V
• Rms Voltage (max): 140V
• Peak Non-repetitive Surge Current (max): 50A
• Avg. Forward Curr (max): 1@Ta=40CA
• Rev Curr: 5uA
• Forward Voltage: 1.05V
• Package Type: Case DFS
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88578
Revision: 30-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
0.320 (8.13)
0.335 (8.51)
T
T
0.205 (5.2)
0.195 (5.0)
J
J
0.8
40
= 125 °C
= 25 °C
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For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
1.0
Case Style DFS
J
60
45°
= 25 °C
0.040 (1.02)
0.047 (1.20)
0.120 (3.05)
0.130 (3.3)
1.2
80
100
1.4
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.255 (6.5)
0.404 (10.3)
0.245 (6.2)
0.386 (9.80)
30
25
20
15
10
0
5
Figure 5. Typical Junction Capacitance Per Diode
0.013 (0.330)
0.003 (0.076)
0.1
Vishay General Semiconductor
(1.20 MIN.)
0.047 MIN.
0.060 MIN.
(1.52 MIN.)
EDF1AS thru EDF1DS
1
Mounting Pad La yout
Reverse Voltage (V)
0.205 (5.2)
0.195 (5.0)
10
(10.26 MAX.)
0.404 MAX.
T
f = 1.0 MHz
V
J
sig
100
= 25 °C
= 50 mVp-p
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1000
3