EDF1DS-E3/77 Vishay, EDF1DS-E3/77 Datasheet - Page 3
![Diode Rectifier Bridge Single 200V 1A 4-Pin Case DFS T/R](/photos/22/4/220485/4627240_sml.jpg)
EDF1DS-E3/77
Manufacturer Part Number
EDF1DS-E3/77
Description
Diode Rectifier Bridge Single 200V 1A 4-Pin Case DFS T/R
Manufacturer
Vishay
Datasheet
1.EDF1DS-E345.pdf
(4 pages)
Specifications of EDF1DS-E3/77
Package
4Case DFS
Peak Average Forward Current
1@Ta=40C A
Peak Forward Voltage
1.05 V
Peak Reverse Current
5 uA
Peak Reverse Repetitive Voltage
200 V
Bridge Type
Single Phase
Configuration
Single
Voltage - Peak Reverse (max)
200V
Current - Dc Forward (if)
1A
Diode Type
Single Phase
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Surface Mount
Package / Case
4-SMD (DFS)
Product
Single Phase Bridge
Peak Reverse Voltage
200 V
Maximum Rms Reverse Voltage
140 V
Max Surge Current
50 A
Forward Voltage Drop
1.05 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
8.51 mm
Width
6.5 mm
Height
3.3 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
1A
Forward Voltage Vf Max
1.05V
Diode Mounting Type
SMD
Operating Temperature Range
-55°C To +150°C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
200V
Rms Voltage (max)
140V
Peak Non-repetitive Surge Current (max)
50A
Avg. Forward Curr (max)
1@Ta=40CA
Rev Curr
5uA
Forward Voltage
1.05V
Package Type
Case DFS
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Surface Mount
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88578
Revision: 30-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
0.320 (8.13)
0.335 (8.51)
T
T
0.205 (5.2)
0.195 (5.0)
J
J
0.8
40
= 125 °C
= 25 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
1.0
Case Style DFS
J
60
45°
= 25 °C
0.040 (1.02)
0.047 (1.20)
0.120 (3.05)
0.130 (3.3)
1.2
80
100
1.4
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.255 (6.5)
0.404 (10.3)
0.245 (6.2)
0.386 (9.80)
30
25
20
15
10
0
5
Figure 5. Typical Junction Capacitance Per Diode
0.013 (0.330)
0.003 (0.076)
0.1
Vishay General Semiconductor
(1.20 MIN.)
0.047 MIN.
0.060 MIN.
(1.52 MIN.)
EDF1AS thru EDF1DS
1
Mounting Pad La yout
Reverse Voltage (V)
0.205 (5.2)
0.195 (5.0)
10
(10.26 MAX.)
0.404 MAX.
T
f = 1.0 MHz
V
J
sig
100
= 25 °C
= 50 mVp-p
www.vishay.com
1000
3