HSMS-280E-TR2G Avago Technologies US Inc., HSMS-280E-TR2G Datasheet - Page 3

• Manufacturer Part Number: HSMS-280E-TR2G
• Description: DIODE SCHOTTKY RF CA 70V SOT-23
• Manufacturer: Avago Technologies US Inc.

Specifications of HSMS-280E-TR2G

• Package / Case: SC-70-3, SOT-323-3
• Diode Type: Schottky - 1 Pair Common Anode
• Voltage - Peak Reverse (max): 70V
• Current - Max: 1A
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Resistance @ If, F: 35 Ohm @ 5mA, 1MHz
• Product: Schottky Diodes
• Peak Reverse Voltage: 70 V
• Forward Continuous Current: 1 A
• Max Surge Current: 1 A
• Configuration: Dual Common Anode
• Forward Voltage Drop: 410 mV
• Maximum Reverse Leakage Current: 0.2 uA at 50 V
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument effectively isolates
individual diode branches from the others, allowing
accurate capacitance measurement of each branch or
each diode. The conditions are: 20 mV R.M.S. voltage at 1
MHz. Avago defines this measurement as “CM”, and it is
equivalent to the capaci tance of the diode by itself. The
equivalent diagonal and adja cent capacitances can then
be calculated by the formulas given below.
In a quad, the diagonal capaci tance is the capacitance
between points A and B as shown in the figure below.
The diagonal capacitance is calculated using the follow-
ing formula
Linear Equivalent Circuit, Diode Chip
3
R
C
R
where
I
I
T = temperature, K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-280x product,
please refer to Application Note AN1124.
b
s
C
S
j
j
= saturation current (see table of SPICE parameters)
= externally applied bias current in amps
DIAGONAL
=
= series resistance (see Table of SPICE parameters)
= junction capacitance (see Table of SPICE parameters)
8.33 X 10
I
b
R
+ I
S
= _______ + _______
s
-5
C
C
1
nT
1
+ C
x C
2
2
R
C
C
j
C
3
3
j
+ C
x C
4
4
SPICE Parameters
The equivalent adjacent capacitance is the capacitance
between points A and C in the figure below. This capaci-
tance is calculated using the following formula
This information does not apply to cross-over quad
diodes.
Parameter
B
C
E
I
I
N
R
P
P
M
C
BV
S
G
S
B
T
V
J0
ADJACENT
C
= C
Units
V
pF
eV
A
A
Ω
V
1
+ ____________
–– + –– + ––
C
C
C
1
1
2
2
HSMS-280x
75
1.6
0.69
E-5
3.00E-08
1.08
30
0.65
2
0.5
C
1
1
3
C
1
4
C
C
3
4
A
B