BAP50-05WT/R NXP Semiconductors, BAP50-05WT/R Datasheet - Page 3

• Manufacturer Part Number: BAP50-05WT/R
• Description: Diode PIN 50V 3-Pin SC-70 T/R
• Manufacturer: NXP Semiconductors

Specifications of BAP50-05WT/R

• Package: 3SC-70
• Configuration: Dual Common Cathode
• Maximum Forward Current: 50 mA
• Maximum Forward Voltage: 1.1 V
• Maximum Reverse Voltage: 50 V
• Maximum Diode Capacitance: 0.5@5V pF
• Maximum Power Dissipation: 240 mW

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2001 Apr 17
Per diode
V
V
I
C
r
s
s
s
s

L
R
j
SYMBOL
R
SYMBOL
D
L
S
= 25 C unless otherwise specified.
F
R
21
21
21
21
General purpose PIN diode
d
th j-s




2
2
2
2
forward voltage
reverse voltage
reverse current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
I
V
V
V
V
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
when switched from I
I
measured at I
I
F
R
F
F
F
F
F
F
F
F
F
F
F
F
R
F
R
R
R
R
R
R
R
= 50 mA
= 0.5 mA; f = 100 MHz; note 1
= 1 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 0.5 mA; f = 900 MHz
= 0.5 mA; f = 1800 MHz
= 0.5 mA; f = 2450 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 100 MHz
= 10 A
= 6 mA; R
= 50 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
3
CONDITIONS
L
R
= 100 ;
= 3 mA
F
= 10 mA to

50





















MIN.
0.95


0.45
0.35
0.3
25
14
3
19
15.7
13.5
1.84
1.90
1.92
1.08
1.13
1.17
0.26
0.30
0.36
1.05
1.6
TYP.
VALUE
BAP50-05W
250
Product specification
1.1

100

0.6
0.5
40
25
5














MAX.
UNIT
K/W
V
V
nA
pF
pF
pF



dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
nH
UNIT