BAP51-03T/R NXP Semiconductors, BAP51-03T/R Datasheet - Page 4

• Manufacturer Part Number: BAP51-03T/R
• Description: Diode PIN 50V 2-Pin SOD-323 T/R
• Manufacturer: NXP Semiconductors

Specifications of BAP51-03T/R

• Package: 2SOD-323
• Configuration: Single
• Maximum Forward Current: 50 mA
• Maximum Forward Voltage: 1.1 V
• Maximum Reverse Voltage: 50 V
• Maximum Diode Capacitance: 0.35@5V pF
• Maximum Power Dissipation: 500 mW

NXP Semiconductors
GRAPHICAL DATA
2004 Feb 11
handbook, halfpage
handbook, halfpage
General purpose PIN diode
T
Fig.2
(1) I
Diode inserted in series with a 50  stripline circuit and biased via the
analyzer Tee network.
T
Fig.4
|S 21 |
(dB)
j
amb
= 25 C; f = 100 MHz.
−0.5
−2.5
−1.5
(Ω)
r D
−2
−1
F
= 25 C.
10
2
0
5
2
1
= 10 mA.
10
0.5
−1
Forward resistance as a function of forward
current; typical values.
Insertion loss (S
function of frequency; typical values.
1
(2)
(1)
1.5
I
F
(2)
= 1 mA.
21
1

2
(3)
) of the diode as a
2
I F (mA)
2.5
(3) I
f (GHz)
MGS659
MGS322
F
= 0.5 mA.
10
3
4
handbook, halfpage
handbook, halfpage
T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
Fig.5
|S 21 |
(fF)
(dB)
C d
j
amb
= 25 C; f = 1 MHz.
−20
−25
500
400
300
200
100
−10
−15
−5
2
= 25 C.
0
0
0.5
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (S
frequency; typical values.
4
1
21
1.5

8
2
) of the diode as a function of
12
2
Product specification
2.5
BAP51-03
16
V R (V)
f (GHz)
MGS323
MGS660
20
3