HSMP-3832-BLKG Avago Technologies US Inc., HSMP-3832-BLKG Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/0/86/avago_technologies_us_inc__sml.jpg)
HSMP-3832-BLKG
Manufacturer Part Number
HSMP-3832-BLKG
Description
DIODE PIN GP 200V SOT-23
Manufacturer
Avago Technologies US Inc.
Datasheet
1.HSMP-3830-BLKG.pdf
(7 pages)
Specifications of HSMP-3832-BLKG
Diode Type
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (max)
200V
Current - Max
1A
Capacitance @ Vr, F
0.3pF @ 50V, 1MHz
Resistance @ If, F
1.5 Ohm @ 100mA, 100MHz
Power Dissipation (max)
250mW
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Capacitance Cd Max @ Vr F
0.3pF
Resistance @ If
1.5ohm
Center Frequency
100MHz
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
100mA
Diode Case Style
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Parameters at T
3
Figure 1. Forward Current vs. Forward Voltage.
Figure 4. 2nd Harmonic Input Intercept Point vs.
Diode RF Resistance for Attenuators.
0.01
100
120
110
100
0.1
10
90
80
70
60
50
40
1000
1
0
Diode Mounted as a
Series Attenuator
in a 50 Ohm Microstrip
and Tested at 123 MHz
V
F
0.2
DIODE RF RESISTANCE ()
– FORWARD VOLTAGE (mA)
125C
0.4
100
25C
0.6
–50C
C
= 25°C (unless otherwise noted), Single Diode
0.8
10
1.0
1.2
Figure 5. 2nd Harmonic Input Intercept Point vs.
Forward Bias Current for Switches.
Figure 2. RF Capacitance vs. Reverse Bias.
0.35
0.30
0.25
0.20
0.15
120
115
110
105
100
95
90
85
0
1
Diode Mounted as a
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
I
100 MHz
F
1 GHz
– FORWARD BIAS CURRENT (mA)
2
1 MHz
4
REVERSE VOLTAGE (V)
6
8
10 12
10
14
16
18 20
30
Figure 6. Reverse Recovery Time vs. Forward Current
for Various Reverse Voltage.
1000
Figure 3. RF Resistance at 25C vs. Forward Bias Current.
1000
100
0.1
100
10
0.01
10
1
10
I
F
– FORWARD BIAS CURRENT (mA)
HSMP-3830
FORWARD CURRENT (mA)
0.1
1
20
10
V
V
V
R
R
R
= 20V
= 10V
= 5V
100
30