HSMP-3866-TR1G Avago Technologies US Inc., HSMP-3866-TR1G Datasheet - Page 3

• Manufacturer Part Number: HSMP-3866-TR1G
• Description: DIODE PIN ATTEN QUAD PI SOT-25
• Manufacturer: Avago Technologies US Inc.
• Type: Attenuatorr

Specifications of HSMP-3866-TR1G

• Package / Case: SOT-23-5, SC-74A, SOT-25
• Diode Type: PIN - 2 Pair CA + CC
• Voltage - Peak Reverse (max): 50V
• Current - Max: 1A
• Capacitance @ Vr, F: 0.22pF @ 50V, 1MHz
• Resistance @ If, F: 1.5 Ohm @ 100mA, 100MHz
• Configuration: Quad
• Reverse Voltage: 50 V
• Forward Continuous Current: 1 A
• Frequency Range: LF or MF or HF or VHF or UHF or SHF
• Termination Style: SMD/SMT
• Carrier Life: 0.5 us
• Maximum Diode Capacitance: 0.22 pF @ 50 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.5 Ohm (Typ) @ 100 mA
• Maximum Series Resistance @ Minimum If: 3 Ohm (Typ) @ 10 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Recovery Time: 80 nS
• Operating Temperature Classification: Military
• Package Type: SOT-23
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Applications Frequency Range: LF/MF/HF/VHF/UHF/SHF
• Capacitance Cd Max @ Vr F: 0.2pF
• Resistance @ If: 22ohm
• Forward Current If(av): 50mA
• Diode Case Style: SOT-363
• No. Of Pins: 6
• Capacitance Ct: 0.2pF
• Breakdown Voltage: 50V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / Rohs Status: Compliant

HSMP-386x Typical Parameters at T
T est Conditions
Typical Performance, T
Equivalent Circuit Model
HSMP-386x Chip*
3
1000
Figure 1. RF Capacitance vs. Reverse Bias.
1.5 Ω
0.35
0.30
0.25
0.20
0.15
Figure 4. Reverse Recovery Time vs. Forward
Current for Various Reverse Voltages.
100
R
10
Part Number
s
10
0
HSMP-
386x
100 MHz
1 GHz
2
1 MHz
FORWARD CURRENT (mA)
4
REVERSE VOLTAGE (V)
6
8
0.12 pF
R
20
10 12
C
j
j
C
= 25°C, each diode
Total Resistance
14
f = 100 MHz
V
V
V
I
R
F
16
R
R
= 1 mA
R
= 20 V
= 5 V
= 10 V
T
22
(Ω)
18 20
30
C
= 25°C
R
C
R
I = Forward Bias Current in mA
* See AN1124 for package models
T
T
j
=
Figure 2. Typical RF Resistance vs. Forward Bias
Current.
= 1.5 + R
= C
Figure 5. Forward Current vs. Forward
Voltage.
1000
100
0.01
100
0.1
10
10
12
I
Carrier Lifetime
1
0.01
P
0.9
1
T
I
0
R
F
+ C
= 250 mA
= 50 mA
Ω
t (ns)
500
V
F
0.2
j
j
– FORWARD VOLTAGE (mA)
BIAS CURRENT (mA)
125 C 25 C –50 C
0.1
0.4
0.6
1
T
T
T
A
A
A
= +85 C
= +25 C
= –55 C
0.8
Reverse Recovery Time
10
90% Recovery
1.0
I
F
V
= 20 mA
R
T
= 10 V
100
rr
1.2
80
(ns)
Figure 3. 2nd Harmonic Input Intercept Point
vs. Forward Bias Current for Switch Diodes.
120
105
100
115
110
95
90
85
1
Diode Mounted as a
Series Switch in a
50 Microstrip and
Tested at 123 MHz
I
F
– FORWARD BIAS CURRENT (mA)
Total Capacitance
f = 1 MHz
V
R
C
0.20
= 50 V
T
(pF)
10
30