MMBD301LT3G ON Semiconductor, MMBD301LT3G Datasheet - Page 8
![DIODE SCHOTTKY 200MW 30V SOT-23](/photos/1/38/13877/sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
MMBD301LT3G
Manufacturer Part Number
MMBD301LT3G
Description
DIODE SCHOTTKY 200MW 30V SOT-23
Manufacturer
ON Semiconductor
Datasheet
1.MMBD301LT1G.pdf
(5 pages)
Specifications of MMBD301LT3G
Diode Type
Schottky - Single
Voltage - Peak Reverse (max)
30V
Capacitance @ Vr, F
1.5pF @ 15V, 1MHz
Power Dissipation (max)
200mW
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Configuration
Single
Reverse Voltage Vr
30V
Forward Voltage Vf Max
450mV
Capacitance Ct
0.9pF
Diode Case Style
SOT-23
No. Of Pins
3
Filter Terminals
SMD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Max
-
Resistance @ If, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBD301LT3G
Manufacturer:
ON
Quantity:
30 000
Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
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