MMBV3700LT1G ON Semiconductor, MMBV3700LT1G Datasheet
MMBV3700LT1G
Specifications of MMBV3700LT1G
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MMBV3700LT1G Summary of contents
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... P D 200 mW 2.8 mW/°C T +125 ° −55 to +150 °C stg MMBV3700LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com SOT− Anode Cathode MARKING DIAGRAM ...
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ELECTRICAL CHARACTERISTICS (T Characteristic Reverse Breakdown Voltage ( mA) R Diode Capacitance ( 1.0 MHz) R Series Resistance (Figure mA) F Reverse Leakage Current (V = 150 V) R ...
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... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...