BAR 64-04W E6327 Infineon Technologies, BAR 64-04W E6327 Datasheet - Page 4
![DIODE RF SER 150V 100MA SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
BAR 64-04W E6327
Manufacturer Part Number
BAR 64-04W E6327
Description
DIODE RF SER 150V 100MA SOT-323
Manufacturer
Infineon Technologies
Datasheet
1.BAR_64-02V_E6327.pdf
(16 pages)
Specifications of BAR 64-04W E6327
Package / Case
SOT-323
Diode Type
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (max)
150V
Current - Max
100mA
Capacitance @ Vr, F
0.35pF @ 20V, 1MHz
Resistance @ If, F
1.35 Ohm @ 100mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Dual Series
Reverse Voltage
150 V
Forward Continuous Current
100 mA
Frequency Range
MF, HF, VHF, UHF, SHF
Carrier Life
1.55 us
Forward Voltage Drop
1.1 V at 50 mA
Maximum Diode Capacitance
0.35 pF at 20 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
1.35 Ohms at 100 mA
Maximum Series Resistance @ Minimum If
20 Ohms at 1 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR6404WE6327XT
SP000010180
SP000010180
Diode capacitance C
f = Parameter
Forward resistance r
f = 100MHz
Ohm
10
pF
10
10
10
10
0.7
0.5
0.4
0.3
0.2
0.1
-1
3
2
1
0
10
0
-2
2
4
10
6
-1
1 MHz
100 MHz
1 GHz
1.8 GHz
8
T
f
= (I
10
10
= (V
0
12
F
)
R
14
)
10
16
1
V
V
I
mA
F
R
20
10
2
4
Reverse parallel resistance R
f = Parameter
Forward current I
T
KOhm
A
= Parameter
10
10
10
10
10
10
10
10
10
10
10
10
10
A
-1
-1
-2
-3
-4
-5
-6
4
3
2
1
0
0
0
0
5
0.2
10
0.4
F
15
=
0.6
20
(V
F
)
100 MHz
1 GHz
1.8 GHz
25
0.8
P
2007-12-11
30
-40 °C
25 °C
85 °C
125 °C
BAR64...
= (V
V
V
V
V
R
F
R
)
1.2
40