BAR 63-04 E6327 Infineon Technologies, BAR 63-04 E6327 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BAR 63-04 E6327
Manufacturer Part Number
BAR 63-04 E6327
Description
DIODE RF SER 50V 100MA SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BAR_63-03W_E6327.pdf
(16 pages)
Specifications of BAR 63-04 E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (max)
50V
Current - Max
100mA
Capacitance @ Vr, F
0.3pF @ 5V, 1MHz
Resistance @ If, F
1 Ohm @ 10mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Dual Series
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Frequency Range
SHF
Carrier Life
0.075 us
Forward Voltage Drop
1.2 V
Maximum Diode Capacitance
0.3 pF at 5 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
1 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
2 Ohms at 5 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR6304E6327XT
SP000012206
SP000012206
Diode capacitance C
f = 1MHz - 1.8GHz
Forward resistance r
f = 100MHz
C
r
f
T
10
10
10
10
0.5
0.4
0.3
0.2
0.1
pF
-1
0
2
1
0
10
0
-2
10
-1
10
T
f
10
=
=
0
(I
(V
F
20
R
)
)
10
1
EHD07139
V
EHD07138
V
mA
F
R
10
30
2
4
Reverse parallel resistance R
f = Parameter
Forward current I
T
F
KOhm
A
10
10
10
10
10
10
10
= Parameter
mA
10
10
10
10
10
-1
-2
-3
3
2
1
0
0.3
-1
3
2
1
0
BAR 63...
0
100 MHz
1 GHz
1.8 GHz
5
0.5
10
F
=
15
(V
0.8
F
)
20
P
2007-04-19
25 ˚C
40
85
BAR63...
= (V
1
˚C
˚C
V
EHD07171
V
V
F
V 1.2
R
R
)
30