BAR 63-05W H6327 Infineon Technologies, BAR 63-05W H6327 Datasheet - Page 5

• Manufacturer Part Number: BAR 63-05W H6327
• Description: DIODE RF SW 50V 100MA SOT23
• Manufacturer: Infineon Technologies

Specifications of BAR 63-05W H6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
• Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Product: Switching Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Configuration: Common Cathode
• Forward Voltage Drop: 0.95 V
• Maximum Reverse Leakage Current: 10 nA
• Maximum Power Dissipation: 250 mW
• Operating Temperature Range: - 55 C to + 125 C
• Maximum Diode Capacitance: 0.3 pF
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR6305WH6327XT

Forward current I
BAR63-04...BAR63-06
Forward current I
BAR63-03W
mA
mA
120
120
80
60
40
20
80
60
40
20
0
0
0
0
15
15
30
30
45
45
F
F
60
60
=
=
75
75
(T
(T
S
S
90 105 120 °C
90 105 120 °C
)
)
T
T
S
S
150
150
5
Forward current I
BAR63-02V, BAR63-02W
Forward current I
BAR63-04W...BAR63-06W
mA
mA
120
120
80
60
40
20
80
60
40
20
0
0
0
0
15
15
30
30
45
45
F
F
60
60
=
=
75
75
(T
(T
S
S
90 105 120 °C
90 105 120 °C
)
)
2007-04-19
BAR63...
T
T
S
S
150
150