5082-3379 Avago Technologies US Inc., 5082-3379 Datasheet - Page 2

• Manufacturer Part Number: 5082-3379
• Description: DIODE PIN RF SWITCH 50V AXIAL
• Manufacturer: Avago Technologies US Inc.

Specifications of 5082-3379

• Package / Case: Axial
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 50 V
• Frequency Range: VHF, UHF
• Termination Style: Axial
• Carrier Life: 1.3 us
• Maximum Diode Capacitance: 0.4 pF at 50 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Resistance @ If, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant

Mechanical Specifications
The Avago Outline 15 package has a glass hermetic seal with
dumet leads. The lead finish is 95-5 tin-lead (SnPb) for all
PIN diodes. The leads on the Outline 15 package should be
restricted so that the bend starts at least 1/16 inch (1.6 mm)
RF Current Controlled Resistor Diodes
Electrical Specifications at T
*The 1N5767 has the additional specifications: τ = 1.0 msec minimum
2
General Purpose Diodes
Electrical Specifications at T
Notes:
Typical CW power switching capability for a shunt switch in a 50Ω system is 2.5 W.
Conditions I
Conditions
General Purpose Switching and Attenuating
Band Switching
5082-3080
5082-3379
5082-3081
1N5767*
1N5719
Number
Number
3001
3039
3077
3188
5082-
Test
Test
Part
Part
R
I
1300 (typ.)
1300 (typ.)
1300 (typ.)
2500 (typ.)
F
= 250 mA
Effective
= 50 mA
Lifetime
**V
Carrier
τ
Capacitance
*V
f = 1 MHz
V
Maximum
(ns)
R
C
R
R
Total
0.25
0.25
1.0*
= 50 V
T
0.3**
0.3
= 100 V
= 20 V
(pF)
A
A
= 25°C
= 25°C
I
Breakdown
Measure
R
V
≤ 10 µA
Voltage
R
V
Min.
100
100
100
BR
= V
50
(V)
BR
Breakdown
I
,
R
Minimum
Measure
V
Voltage
≤ 10 µA
V
R
200
150
150
200
BR
35
= V
f = 100 MHz
I
F
(V)
Resistance
= 100 mA
Residual
BR
R
Series
Max.
S
2.5
2.5
3.5
(
Ω
)
I
V
R
F
= 1 µA maximum at V
Residual Series
**I
f = 100 MHz
= 1 V maximum at I
*I
I
F
Resistance
Maximum
f = 1 MHz
F
Capacitance
V
=100 mA
F
= 20 mA
R
0.6**
R
= 10 mA
1.25
1.25
C
S
1.0
1.5
Max.
Total
= 50 V
from the glass body. Typical package inductance and ca-
pacitance are 2.5 nH and 0.13 pF, respectively. Marking is
by digital coding with a cathode band.
T
0.4
0.4
0.4
0.4
(Ω)
(pF)
1000
1000
1500
I
f = 100 MHz
F
F
Limit, R
Min.
= 0.01 mA
Resistance
= 100 mA.
R
= 50 V
High
Effective Carrier
I
*I
I
R
100 (min.)
100 (min.)
100 (min.)
100 (min.)
*I
70 (typ.)*
F
H
F
= 250 mA
Max.
Lifetime
R
= 50 mA
(
= 10 mA
Ω
τ (ns)
= 6 mA
)
I
f = 100 MHz
F
I
Min.
Limit, R
F
= 20 mA**
Resistance
= 1.0 mA
Low
L
Max.
(
Ω
Reverse Recovery
90% Recovery
8**
8**
8**
)
8**
I
100 (typ.)
100 (typ.)
100 (typ.)
100 (typ)
F
V
12 (typ.)
= 20 mA
R
t
Time
rr
= 10 V
I
f = 100 MHz
Matched at
and 1.0 mA
F
(ns)
= 0.01 mA
Resistance
Difference
Slope, Dc
Batch
vs. Bias
Max.
in