MRFE6S9045NR1 Freescale Semiconductor, MRFE6S9045NR1 Datasheet - Page 6

• Manufacturer Part Number: MRFE6S9045NR1
• Description: MOSFET RF N-CH 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9045NR1

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 22.1dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Drain Source Voltage Vds: 66V
• Rf Transistor Case: TO-270
• Termination Type: SMD
• Output Power Pout: 10W
• Peak Reflow Compatible (260 C): Yes
• Transistor Polarity: N Channel
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 10W
• Power Gain (typ)@vds: 22.1/20/20dB
• Frequency (max): 1GHz
• Package Type: TO-270
• Pin Count: 3
• Input Capacitance (typ)@vds: 81@28VpF
• Output Capacitance (typ)@vds: 27@28VpF
• Reverse Capacitance (typ): 1.02@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA/CW/GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Filter Terminals: SMD
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Operating Frequency Max: 880MHz
• Lead Free Status / RoHS Status: Contains lead / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MRFE6S9045NR1; MRFE6S9045NR1TR

MRFE6S9045NR1
6
24
23
22
21
20
19
18
17
1
350 mA
262.5 mA
175 mA
I
Figure 5. Two - Tone Power Gain versus
DQ
= 525 mA
V
Two−Tone Measurements
DD
P
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
out
, OUTPUT POWER (WATTS) PEP
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P
Output Power
437.5 mA
10
23
22
21
20
19
18
17
16
23
22
21
20
19
18
17
16
15
800
800
ACPR
η
η
D
D
820
820
ALT1
ALT1
G
V
I
Sync, Paging, Traffic Codes 8
Through 13
DQ
ps
DD
TYPICAL CHARACTERISTICS
V
P
N−CDMA IS−95 Pilot Sync, Paging
Traffic Codes 8 Through 13
840
840
DD
out
= 350 mA, N−CDMA IS−95 Pilot
= 28 Vdc, P
= 10 W (Avg.) I
= 28 Vdc
100
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
860
860
IRL
out
200
= 20 W (Avg.)
880
880
DQ
= 350 mA
900
900
G
ps
−10
−20
−30
−40
−50
−60
920
920
1
Figure 6. Third Order Intermodulation Distortion
V
Two−Tone Measurements
262.5 mA
DD
940
940
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
ACPR
IRL
960
960
P
out
34
32
30
−30
−40
−50
−60
−70
50
40
30
−20
−30
−40
−50
−60
−70
, OUTPUT POWER (WATTS) PEP
versus Output Power
I
DQ
out
out
437.5 mA
= 175 mA
= 10 Watts Avg.
= 20 Watts Avg.
10
0
−5
−10
−15
−20
0
−5
−10
−15
Freescale Semiconductor
525 mA
RF Device Data
350 mA
100
200