MRF5S9101NR1 Freescale Semiconductor, MRF5S9101NR1 Datasheet

MOSFET N-CH 100W 26V TO-270-4

MRF5S9101NR1

Manufacturer Part Number
MRF5S9101NR1
Description
MOSFET N-CH 100W 26V TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF5S9101NR1

Transistor Type
N-Channel
Frequency
960MHz
Gain
17.5dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
700mA
Voltage - Test
26V
Power - Output
100W
Package / Case
TO-270-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
MRF5S9101NR1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF5S9101NR1
Manufacturer:
SAMSUNG
Quantity:
460 000
Part Number:
MRF5S9101NR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
applications.
GSM Application
• Typical GSM Performance: V
GSM EDGE Application
• Typical GSM EDGE Performance: V
• Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for GSM and GSM EDGE base station applications with
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz)
50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz)
@ f = 960 MHz
Derate above 25°C
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 50 W CW
Power Gain - 17.5 dB
Drain Efficiency - 60%
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
Power Gain — 18 dB
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 2.3% rms
C
= 25°C
DD
Characteristic
= 26 Volts, I
Rating
DD
DD
Operation
= 28 Volts, I
DQ
= 700 mA, P
DQ
= 650 mA, P
out
=
out
=
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
CASE 1486 - 03, STYLE 1
Document Number: MRF5S9101
MRF5S9101MR1 MRF5S9101MBR1
MRF5S9101MBR1
MRF5S9101MR1
869 - 960 MHz, 100 W, 26 V
MRF5S9101MR1
LATERAL N - CHANNEL
TO - 270 WB - 4
RF POWER MOSFETs
PLASTIC
GSM/GSM EDGE
- 65 to +150
Value
- 0.5, +68
- 0.5, +15
CASE 1484 - 04, STYLE 1
Value
2.44
0.41
0.47
427
200
MRF5S9101MBR1
(1,2)
TO - 272 WB - 4
PLASTIC
Rev. 3, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
W
1

Related parts for MRF5S9101NR1

MRF5S9101NR1 Summary of contents

Page 1

... Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz ...

Page 2

... Vdc — 3.7 — Vdc — 0.21 0.3 Vdc — 7 — S — 70 — pF — 2.2 — 700 mA 960 MHz — % — 100 110 — W (continued) RF Device Data Freescale Semiconductor ...

Page 3

... Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system 650 mA, 869 MHz<Frequency<894 MHz, 920 MHz<Frequency<960 MHz DQ Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol G ps η D EVM ...

Page 4

... Microstrip (quarter wave length for bias purpose) Taconic TLX8 - 0300, 0.030″, ε = 2.55 r Part Number Manufacturer Murata ATC ATC ATC ATC ATC ATC ATC ATC Sprague RF Device Data Freescale Semiconductor RF OUTPUT ...

Page 5

... R2 C10 C19 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S9101MR1(MBR1) 900 MHz Test Circuit Component Layout ...

Page 6

... Watts CW out Vdc 940 MHz 100 1000 Figure 6. Power Gain versus Output Power −15 −30 −45 1000 1020 −8 −12 −16 −20 −24 1000 1020 100 120 140 160 180 P , OUTPUT POWER (WATTS) CW out RF Device Data Freescale Semiconductor 32 V 200 ...

Page 7

... SR 600 kHz 40 W Avg Avg Avg. − Avg. −83 900 910 920 930 940 950 f, FREQUENCY (MHz) Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS - 900 MHz 70 3 −30_C 25_C 85_C 2 1.5 20 ...

Page 8

... This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application 85_C C −30_C 210 2 RF Device Data Freescale Semiconductor ...

Page 9

... C16, C22 6.8 pF 100B Chip Capacitors C18 5.6 pF 100B Chip Capacitor C19, C20 2.7 pF 100B Chip Capacitors C21 220 mF Electrolytic Capacitor, Axial R1 kW, 1/4 W Chip Resistors (1206 1/4 W Chip Resistor (1206) RF Device Data Freescale Semiconductor C7 Z14 R3 C16 DUT C22 C17 Z10 Z11 ...

Page 10

... C19 800 MHz Rev 2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. ...

Page 11

... FREQUENCY (MHz) Figure 18. Error Vector Magnitude versus Frequency RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS - 800 MHz Vdc 700 mA DQ 830 840 850 860 870 880 890 900 910 920 930 f, FREQUENCY (MHz) out ps D ...

Page 12

... Figure 21. Spectral Regrowth at 400 kHz Vdc 650 880 MHz T = 25_C OUTPUT POWER (WATTS) AVG. out Figure 22. Spectral Regrowth at 600 kHz versus Output Power T = 25_C Vdc 650 880 MHz OUTPUT POWER (WATTS) AVG. out versus Output Power Device Data Freescale Semiconductor 80 90 ...

Page 13

... MHz f = 845 MHz Z load Figure 23. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor f = 845 MHz Z source f = 990 MHz = 5 Ω Vdc 700 mA 100 out source load MHz Ω Ω 845 4.29 - j2.23 1.15 - j0.04 865 3.94 - j1.24 1.05 - j0.10 890 2 ...

Page 14

... MRF5S9101MR1 MRF5S9101MBR1 14 NOTES RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor NOTES MRF5S9101MR1 MRF5S9101MBR1 15 ...

Page 16

... E5 .346 .350 8.79 8.89 F .025 BSC 0.64 BSC b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .106 BSC 2.69 BSC aaa .004 0.10 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MRF5S9101MR1 MRF5S9101MBR1 17 ...

Page 18

... MRF5S9101MR1 MRF5S9101MBR1 18 RF Device Data Freescale Semiconductor ...

Page 19

... RF Device Data Freescale Semiconductor MRF5S9101MR1 MRF5S9101MBR1 19 ...

Page 20

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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