J310G ON Semiconductor, J310G Datasheet - Page 4
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J310G
Manufacturer Part Number
J310G
Description
JFET VHF/UHF N-CH 25V TO92
Manufacturer
ON Semiconductor
Datasheet
1.J310G.pdf
(5 pages)
Specifications of J310G
Transistor Type
N-Channel JFET
Frequency
100MHz
Gain
16dB
Voltage - Rated
25V
Current Rating
60mA
Current - Test
10mA
Voltage - Test
10V
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Breakdown Voltage
25 V
Drain Current (idss At Vgs=0)
24 mA to 60 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Breakdown Voltage Vbr
-25V
Gate-source Cutoff Voltage Vgs(off) Max
-6.5V
Power Dissipation Pd
350mW
Operating Temperature Range
-65°C To +125°C
No. Of Pins
3
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
J310GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
J310G
Manufacturer:
ON Semiconductor
Quantity:
1 150
180°
170°
160°
150°
140°
130°
100 k
1.0 k
10 k
q
100
21
0.01
, q
11
Admittance and Forward Transconductance
50°
40°
30°
20°
10°
6.0
30
24
18
12
Figure 5. Common−Gate Y Parameter
0°
Figure 7. Common−Gate Y Parameter
0
100
100
Phase−Angle versus Frequency
Magnitude versus Frequency
Figure 3. Common−Source Output
V
I
T
D
A
DS
= 10 mA
= 25°C
= 10 V
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
q
versus Drain Current
200
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
200
12
Y
I
D
os
, DRAIN CURRENT (mA)
q
11
300
300
q
V
I
T
q
D
A
22
DS
21
= 10 mA
= 25°C
Y
Y
Y
= 10 V
500
V
V
11
21
22
500
GS(off)
GS(off)
Y
12
Y
700
700
fs
= −2.3 V =
= −5.7 V =
1000
1000
3.0
2.4
1.8
1.2
0.6
−2
−20 °
−40 °
−60 °
−80 °
−100 °
−120 °
−140 °
−160 °
−180 °
−200 °
q
0°
12
, q
http://onsemi.com
Y
22
87°
86°
85°
84°
83°
82°
fs
J309, J310
100
1.0 k
10
1.0
4
−100 °
−120 °
−20 °
−40 °
−60 °
−80 °
0.85
0.79
0.73
0.67
0.61
0.55
|S
7.0
4.0
1.0
q
10
21
11
0
10
|, |S
, q
120°
100°
0.45
0.39
0.33
0.27
0.21
0.15
12
80°
60°
40°
20°
Capacitance versus Gate−Source Voltage
11
Figure 6. Common−Gate S Parameter
9.0
100
|
100
Figure 8. S Parameter Phase−Angle
Figure 4. On Resistance and Junction
Magnitude versus Frequency
q
q
V
I
T
21
D
12
8.0
A
DS
V
= 10 mA
GS
= 25°C
q
= 10 V
11
, GATE SOURCE VOLTAGE (VOLTS)
versus Frequency
7.0
200
f, FREQUENCY (MHz)
200
f, FREQUENCY (MHz)
V
I
T
D
A
DS
= 10 mA
= 25°C
6.0
= 10 V
300
300
S
S
S
11
21
12
5.0
q
S
22
22
4.0
500
500
q
3.0
700
700
11
q
21
2.0
1000
1000
C
0.060
0.048
0.036
0.024
0.012
0
−20 °
−40 °
−60 °
−80 °
−100 °
q
gd
|S
R
21
1.0
12
DS
, q
|, |S
C
22
gs
1.00
0.98
0.96
0.94
0.92
0.90
22
0
|
120
96
72
48
24
0