NE3512S02-T1C-A CEL, NE3512S02-T1C-A Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/1/129/cel_sml.jpg)
NE3512S02-T1C-A
Manufacturer Part Number
NE3512S02-T1C-A
Description
HJ-FET NCH 13.5DB S02
Manufacturer
CEL
Specifications of NE3512S02-T1C-A
Transistor Type
HFET
Frequency
12GHz
Gain
13.5dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.35dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
S02
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE3512S02-T1C-A
Manufacturer:
NEC
Quantity:
10 000
Part Number:
NE3512S02-T1C-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
–2.0
0
0
MINIMUM NOISE FIGURE,
2
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
GATE TO SOURCE VOLTAGE
4
Gate to Source Voltage V
50
Ambient Temperature T
6
Frequency f (GHz)
Mounted on Glass Epoxy PCB
(1.08 cm
100
8
G
NF
a
–1.0
10
min
2
150
× 1.0 mm (t) )
12
A
GS
14
(˚C)
A
V
V
I
200
(V)
D
DS
= +25°C, unless otherwise specified)
DS
= 10 mA
= 2 V
16
= 2 V
Data Sheet PG10592EJ01V0DS
250
18
0
25
20
15
10
5
0
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
80
60
40
20
ASSOCIATED GAIN vs. DRAIN CURRENT
0
0
f = 12 GHz
V
DS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= 2 V
Drain to Source Voltage V
5
Drain Current I
10
NF
1.0
G
min
a
15
D
(mA)
DS
V
(V)
NE3512S02
20
GS
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
25
16
14
12
10
8
6
4
2
0
3