NE3508M04-T2-A CEL, NE3508M04-T2-A Datasheet - Page 2

• Manufacturer Part Number: NE3508M04-T2-A
• Description: AMP HJ-FET 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NE3508M04-T2-A

• Transistor Type: HFET
• Frequency: 2GHz
• Gain: 14dB
• Voltage - Rated: 4V
• Current Rating: 120mA
• Noise Figure: 0.45dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Power - Output: 18dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Polarity: N-Channel
• Power Dissipation: 125 mW
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Forward Transconductance Gfs (max / Min): 55 mS
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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RECOMMENDED OPERATING CONDITIONS (T
ELECTRICAL CHARACTERISTICS (T
2
Drain to Source Voltage
Drain Current
Input Power
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Parameter
Parameter
Symbol
Symbol
V
I
I
V
GS (off)
NF
P
GSO
g
G
DSS
I
DS
D
m
in
a
A
V
V
V
V
V
Data Sheet PG10456EJ03V0DS
= +25°C, unless otherwise specified)
GS
DS
DS
DS
DS
MIN.
1
5
−
= 2 V, V
= 2 V, I
= 2 V, I
= 2 V, I
= −3.0 V
D
D
D
Test Conditions
TYP.
GS
A
= 100
= 10 mA
= 10 mA, f = 12 GHz
10
2
−
= +25°C)
= 0 V
μ
A
MAX.
15
3
0
dBm
Unit
mA
V
MIN.
−0.2
11.0
25
40
−
−
TYP.
−0.7
0.45
12.0
0.5
40
55
MAX.
−1.5
0.65
NE3503M04
10
70
−
−
Unit
mA
mS
μ
dB
dB
V
A