NE3503M04-T2-A CEL, NE3503M04-T2-A Datasheet - Page 3

• Manufacturer Part Number: NE3503M04-T2-A
• Description: AMP HJ-FET 12GHZ SOT-343
• Manufacturer: CEL

Specifications of NE3503M04-T2-A

• Transistor Type: HFET
• Frequency: 12GHz
• Gain: 12dB
• Voltage - Rated: 4V
• Current Rating: 70mA
• Noise Figure: 0.45dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 55 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 125 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
125
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
50
80
60
40
20
ASSOCIATED GAIN vs. DRAIN CURRENT
–2.0
0
0
0
f = 12 GHz
V
DS
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 2 V
5
Gate to Source Voltage V
50
Ambient Temperature T
Drain Current I
10
100
–1.0
125
15
150
D
(mA)
20
A
GS
(°C)
A
V
200
(V)
DS
= +25°C, unless otherwise specified)
25
= 2 V
G
NF
a
Data Sheet PG10456EJ03V0DS
min
250
30
0
16
14
12
10
8
6
4
2
0
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
2
Drain to Source Voltage V
4
6
Frequency f (GHz)
8
1.0
10
NF
G
a
min
12 14 16 18
DS
V
I
D
V
NE3503M04
DS
(V)
= 10 mA
GS
= 2 V
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
20
25
20
15
10
5
0
3