BLF7G20LS-90P,112 NXP Semiconductors, BLF7G20LS-90P,112 Datasheet - Page 7

• Manufacturer Part Number: BLF7G20LS-90P,112
• Description: TRANSISTOR PWR LDMOS ACC-4L
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20LS-90P,112

• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 84W
• Package / Case: SOT-1121B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064344112

NXP Semiconductors
BLF7G20L-90P_7G20LS-90P_1
Product data sheet
Fig 10. Single carrier W-CDMA power gain and drain
(dB)
G
p
21
19
17
15
0
V
efficiency as function of load power;
typical values
DS
G
η
D
p
= 28 V; I
10
7.7 Test circuit
20
Dq
= 600 mA; f = 1880 MHz.
Table 8.
For test circuit see
[1]
[2]
[3]
Component
C1, C2, C3
C4, C5
C6, C7, C8
C9, C10
C11
R1, R2
30
American Technical Ceramics type 100A or capacitor of same quality.
TDK or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
40
List of components
50
All information provided in this document is subject to legal disclaimers.
P
L
001aal876
Figure
60
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
(W)
BLF7G20L-90P; BLF7G20LS-90P
70
Rev. 01 — 28 April 2010
12.
60
40
20
0
(%)
η
D
Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at
ACPR
(dBc)
−20
−36
−52
−68
0
V
10 MHz as function of load power;
typical values
DS
= 28 V; I
10
20
Dq
= 600 mA; f = 1880 MHz.
24 pF
4.7 μF
11 pF
Value
10 μF
470 μF; 63 V
12 Ω
30
Power LDMOS transistor
40
50
© NXP B.V. 2010. All rights reserved.
ACPR
ACPR
P
L
[1]
[2]
[3]
[2]
001aal877
60
(W)
10M
5M
Remarks
Philips 1206
70
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