BLF6G20LS-75,112 NXP Semiconductors, BLF6G20LS-75,112 Datasheet - Page 100
![IC BASESTATION FINAL SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G20LS-75,112
Manufacturer Part Number
BLF6G20LS-75,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF6G20LS-75,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1.93GHz
Gain
19dB
Voltage - Rated
65V
Current Rating
18A
Current - Test
550mA
Voltage - Test
28V
Power - Output
29.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.235 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
18 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060922112
BLF6G20LS-75
BLF6G20LS-75
BLF6G20LS-75
BLF6G20LS-75
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© 2007 NXP N.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written
consent of the copyright owner. The information presented in this document does not form
part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license under patent or other industrial or
intellectual property rights.
Date of release: January 007
Document order number: 997 750 1504
Printed in the USA
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