BLF6G22LS-100,118 NXP Semiconductors, BLF6G22LS-100,118 Datasheet - Page 2
![TRANS BASESTATION 2-LDMOST](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G22LS-100,118
Manufacturer Part Number
BLF6G22LS-100,118
Description
TRANS BASESTATION 2-LDMOST
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G22LS-100118.pdf
(12 pages)
Specifications of BLF6G22LS-100,118
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
2.11GHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
29A
Current - Test
950mA
Voltage - Test
28V
Power - Output
25W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
29 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061129118
BLF6G22LS-100 /T3
BLF6G22LS-100 /T3
BLF6G22LS-100 /T3
BLF6G22LS-100 /T3
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G22LS-100
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF6G22LS-100 -
Symbol
V
V
I
T
Symbol
R
T
D
stg
j
DS
GS
th(j-case)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
Connected to flange.
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
Rev. 3 — 12 November 2010
Description
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
Simplified outline
Conditions
T
case
BLF6G22LS-100
= 80 °C; P
1
2
3
Power LDMOS transistor
L
= 25 W
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
Max
65
+13
29
+150
225
sym112
Typ
0.43 K/W
Version
SOT502B
1
3
2 of 12
Unit
Unit
V
V
A
°C
°C