BLF6G20-110,112 NXP Semiconductors, BLF6G20-110,112 Datasheet - Page 2
![IC BASESTATION FINAL SOT502A](/photos/5/63/56386/568-2-ldmost_sot-502a_sml.jpg)
BLF6G20-110,112
Manufacturer Part Number
BLF6G20-110,112
Description
IC BASESTATION FINAL SOT502A
Manufacturer
NXP Semiconductors
Specifications of BLF6G20-110,112
Package / Case
SOT502A
Transistor Type
LDMOS
Frequency
1.93GHz
Gain
19dB
Voltage - Rated
65V
Current Rating
29A
Current - Test
900mA
Voltage - Test
28V
Power - Output
25W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
29 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061128112
BLF6G20-110
BLF6G20-110
BLF6G20-110
BLF6G20-110
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF6G20-110,112
Manufacturer:
ZCOMM
Quantity:
1 400
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G20-110_BLF6G20LS-110_3
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G20-110 (SOT502A)
1
2
3
BLF6G20LS-110 (SOT502B)
1
2
3
Type number
BLF6G20-110
BLF6G20LS-110 -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 1800 MHz to 2000 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
Rev. 03 — 13 January 2009
BLF6G20-110; BLF6G20LS-110
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
Simplified outline
1
2
1
2
3
Power LDMOS transistor
3
Graphic symbol
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
0.5
65
2
2
Max
65
+13
29
+150
225
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 10
Unit
V
V
A
C
C