BLF6G27-75,112 NXP Semiconductors, BLF6G27-75,112 Datasheet
BLF6G27-75,112
Specifications of BLF6G27-75,112
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BLF6G27-75,112 Summary of contents
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... BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 — 22 October 2009 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. RF performance at T Mode of operation 1-carrier N-CDMA [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...
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... Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads - earless fl ...
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... D ACPR 885k ACPR 1980k P L(M) [1] Measured within 30 kHz bandwidth. [2] Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability. BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 Thermal characteristics Parameter Conditions thermal resistance from T case junction to case (CW) L Characteristics Conditions drain-source breakdown ...
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... NXP Semiconductors 7.1 Ruggedness in class-AB operation The BLF6G27-75 and BLF6G27LS-75 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 7.2 One-tone (dB) 18 (1) ( 600 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 1. Power gain as a function of load power; ...
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... 600 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 5. Adjacent channel power ratio (885 kHz function of load power; typical values BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 001aak976 (%) (W) L Fig 4. 001aak978 ACPR (dBc (W) L Fig 6. Rev. 01 — 22 October 2009 WiMAX power LDMOS transistor ...
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... 600 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 9. Adjacent channel power ratio (5 MHz function of load power; typical values BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 001aak980 (%) (W) L Fig 8. 001aak982 ACPR (dBc (W) L Fig 10. Adjacent channel power ratio (10 MHz Rev. 01 — 22 October 2009 ...
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... 600 mA; carrier spacing = 10 MHz ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 13. Adjacent channel power ratio (5 MHz function of load power; typical values BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 001aak984 (%) (W) L Fig 12. Drain efficiency as a function of load power; 001aak986 ACPR (dBc (W) L Fig 14. Adjacent channel power ratio (10 MHz Rev. 01 — ...
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... Impedance information Table 8. Typical values per section unless otherwise specified. f GHz 2.5 2.6 2.7 Fig 15. Definition of transistor impedance 8.2 Test circuit C1 Fig 16. Component layout BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 Typical impedance Z S 5.3 j7.7 8.7 j8.7 12.2 + j0.4 gate ...
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... R1, R2 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 List of components for component layout. Description ferrite bead multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor ...
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... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 17. Package outline SOT502A BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS- scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 18. Package outline SOT502B BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS- scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...
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... PAR RF SMD VSWR W-CDMA WiMAX 11. Revision history Table 11. Revision history Document ID Release date BLF6G27-75_6G27LS-75_1 20091022 BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Interim Standard 95 Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Narrowband Code Division Multiple Access ...
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... For more information, please visit: For sales office addresses, please send an email to: BLF6G27-75_6G27LS-75_1 Product data sheet BLF6G27-75; BLF6G27LS-75 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 22 October 2009 Document identifier: BLF6G27-75_6G27LS-75_1 ...