BLF6G20-230PRN,118 NXP Semiconductors, BLF6G20-230PRN,118 Datasheet - Page 4

• Manufacturer Part Number: BLF6G20-230PRN,118
• Description: TRANSISTOR PWR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-230PRN,118

• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 2A
• Voltage - Test: 28V
• Power - Output: 65W
• Package / Case: SOT539A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063293118

NXP Semiconductors
7. Application information
BLF6G20-230PRN_20S-230PRN_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit
Table 8.
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
I
The BLF6G20-230PRN and BLF6G20S-230PRN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
G
RL
η
ACPR
Symbol Parameter
PAR
Dq
D
p
in
= 2000 mA; T
O
output peak-to-average ratio P
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Application information
Application information
DS
case
All information provided in this document is subject to legal disclaimers.
= 28 V; I
DS
= 25
= 28 V; I
Rev. 02 — 9 February 2010
°
1
1
Dq
C; unless otherwise specified; in a class-AB production test circuit.
= 1802.5 MHz; f
= 1872.5 MHz; f
= 2000 mA; P
Dq
= 2000 mA; T
Conditions
at 0.01 % probability on CCDF
L(AV)
2
2
L
= 1807.5 MHz; f
= 1877.5 MHz; RF performance at V
= 230 W (CW); f = 1805 MHz.
= 125 W;
case
BLF6G20(S)-230PRN
Conditions
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
= 25
= 65 W
= 65 W
= 65 W
= 65 W
°
C; unless otherwise specified; in a
3
= 1872.5 MHz; f
Power LDMOS transistor
Min
16.3
-
29
-
Min Typ Max Unit
3.5
Typ
−11
−31
© NXP B.V. 2010. All rights reserved.
17.5 18.7
32
4
= 1877.5 MHz;
4.2
DS
= 28 V;
Max
−6.5
-
−27
-
4 of 13
Unit
dB
dB
%
dBc
dB