BLF6G38-100,112 NXP Semiconductors, BLF6G38-100,112 Datasheet - Page 5

• Manufacturer Part Number: BLF6G38-100,112
• Description: TRANS WIMAX PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-100,112

• Transistor Type: LDMOS
• Frequency: 3.4GHz
• Gain: 13dB
• Voltage - Rated: 65V
• Current Rating: 34A
• Current - Test: 1.05A
• Voltage - Test: 28V
• Power - Output: 18.5W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061296112

NXP Semiconductors
BLF6G38-100_6G38LS-100_1
Product data sheet
Fig 3.
Fig 4.
(dB)
G
P
16
14
12
10
8
6
3400
V
Adjacent channel power ratio as a function of average load power; typical values
V
PAR = 9.7 dB at 0.01 % probability.
Power gain and drain efficiency as function of
frequency; typical values
DS
DS
= 28 V; I
= 28 V; I
7.3.1 Graphs
7.3 Single carrier NA IS-95 broadband performance at 2 W average
3450
Dq
Dq
= 1050 mA; f = 3500 MHz.
= 1050 mA; Single Carrier IS-95;
3500
G
D
P
ACPR
(dBc)
25
35
45
55
65
3550
10
1
f (MHz)
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Rev. 01 — 11 November 2008
3600
BLF6G38-100; BLF6G38LS-100
25
24
23
22
21
20
(%)
1
D
Fig 5.
ACPR
(dBc)
(1) Low frequency component
(2) High frequency component
10
40
50
60
70
3400
P
L(AV)
V
PAR = 9.7 dB at 0.01 % probability.
Adjacent channel power ratio as a function of
frequency; typical values
ACPR
ACPR
ACPR
DS
ACPR
ACPR
ACPR
001aaj036
= 28 V; I
(W)
10M
20M
30M
3440
1500k
1980k
885k
10
2
Dq
WiMAX power LDMOS transistor
= 1050 mA; single carrier IS-95;
3480
3520
(1)
(2)
(1)
(2)
(2)
(1)
3560
© NXP B.V. 2008. All rights reserved.
001aaj039
f (MHz)
3600
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