MRF1511NT1 Freescale Semiconductor, MRF1511NT1 Datasheet

IC MOSFET RF N-CHAN PLD-1.5

MRF1511NT1

Manufacturer Part Number
MRF1511NT1
Description
IC MOSFET RF N-CHAN PLD-1.5
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF1511NT1

Transistor Type
N-Channel
Frequency
175MHz
Gain
13dB
Voltage - Rated
40V
Current Rating
4A
Current - Test
150mA
Voltage - Test
7.5V
Power - Output
8W
Package / Case
PLD-1.5
Drain Source Voltage Vds
40V
Continuous Drain Current Id
4A
Power Dissipation Pd
62.5W
Operating Temperature Range
-65°C To +150°C
Rf Transistor Case
PLD-1.5
No. Of Pins
3
Msl
MSL 3 - 168 Hours
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Other names
MRF1511NT1
MRF1511NT1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF1511NT1
Quantity:
1 400
Part Number:
MRF1511NT1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
cies to 175 MHz. The high gain and broadband performance of this device
makes it ideal for large- signal, common source amplifier applications in 7.5 volt
portable FM equipment.
• Specified Performance @ 175 MHz, 7.5 Volts
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
1. Calculated based on the formula P
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Designed for broadband commercial and industrial applications at frequen-
175 MHz, 2 dB Overdrive
Impedance Parameters
7 inch Reel.
Derate above 25°C
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 8 Watts
Power Gain — 13 dB
Efficiency — 70%
Test Methodology
C
= 25°C
Characteristic
Rating
D
(1)
=
T J – T C
R θJC
G
Rating
3
D
S
Symbol
Symbol
V
R
V
T
Package Peak Temperature
P
T
DSS
I
θJC
GS
stg
D
D
J
Document Number: MRF1511N
LATERAL N - CHANNEL
260
MRF1511NT1
RF POWER MOSFET
CASE 466 - 03, STYLE 1
175 MHz, 8 W, 7.5 V
- 65 to +150
BROADBAND
- 0.5, +40
Value
Value
62.5
± 20
150
PLASTIC
0.5
PLD - 1.5
4
2
(2)
Rev. 8, 6/2009
MRF1511NT1
W/°C
°C/W
Unit
Unit
Unit
Vdc
Vdc
Adc
°C
°C
°C
W
1

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MRF1511NT1 Summary of contents

Page 1

... BROADBAND RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Symbol Value V - 0.5, +40 DSS V ± 62 +150 stg T 150 J (2) Symbol Value R 2 θJC Package Peak Temperature 260 MRF1511NT1 Unit Vdc Vdc Adc W W/°C °C °C Unit °C/W Unit °C 1 ...

Page 2

... DS GS Functional Tests (In Freescale Test Fixture) Common - Source Amplifier Power Gain (V = 7.5 Vdc Watts 150 mA 175 MHz) DD out DQ Drain Efficiency (V = 7.5 Vdc Watts 150 mA 175 MHz) DD out DQ MRF1511NT1 2 = 25°C unless otherwise noted) Symbol I DSS I GSS V GS(th) V DS(on) C iss C oss C rss G ps η ...

Page 3

... Microstrip 1.057″ x 0.080″ Microstrip 0.120″ x 0.080″ Microstrip ® Glass Teflon , 31 mils, 2 oz. Copper 135 MHz 175 MHz 155 MHz OUTPUT POWER (WATTS) out Figure 3. Input Return Loss versus Output Power MRF1511NT1 RF OUTPUT 10 3 ...

Page 4

... MHz 8 135 MHz 175 MHz 200 400 600 I , BIASING CURRENT (mA) DQ Figure 6. Output Power versus Biasing Current 14 12 175 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 8. Output Power versus Supply Voltage MRF1511NT1 7 Figure 5. Drain Efficiency versus Output Power 7 dBm in 40 800 1000 ...

Page 5

... Microstrip 0.490″ x 0.080″ Microstrip 0.872″ x 0.080″ Microstrip 0.206″ x 0.080″ Microstrip ® Glass Teflon , 31 mils, 2 oz. Copper MHz 66 MHz 77 MHz OUTPUT POWER (WATTS) out Figure 12. Input Return Loss versus Output Power MRF1511NT1 RF OUTPUT ...

Page 6

... MHz 66 MHz 200 400 600 I , BIASING CURRENT (mA) DQ Figure 15. Output Power versus Biasing Current MHz 8 66 MHz 88 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 17. Output Power versus Supply Voltage MRF1511NT1 MHz 7 Figure 14. Drain Efficiency versus 7 25.7 dBm in 40 800 1000 0 Figure 16. Drain Efficiency versus ...

Page 7

... JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D 190 200 210 2 MRF1511NT1 7 ...

Page 8

... Figure 1 Complex conjugate of the load OL impedance at given output power, voltage, frequency, and η Note was chosen based on tradeoffs between gain, drain efficiency, and device stability. OL Figure 20. Series Equivalent Input and Output Impedance MRF1511NT1 175 MHz Ω Z 155 o 77 ...

Page 9

... S 22 ∠ φ ∠ φ 0.86 - 172 3 0.86 - 175 - 19 0.86 - 177 - 6 0.86 - 177 - 4 0.86 - 177 - 14 0.86 - 177 - 2 0.87 - 177 - 9 0.87 - 176 - 3 0.88 - 176 - 8 0.88 - 176 - 15 0.88 - 176 MRF1511NT1 9 ...

Page 10

... One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance the linear region of the output characteristic and is speci- fied at a specific gate - source voltage and drain current. The MRF1511NT1 10 APPLICATIONS INFORMATION drain - source voltage under these conditions is termed V ...

Page 11

... Two - port stability analysis with this device’ parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Free- scale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. MRF1511NT1 11 ...

Page 12

... ZONE W 1 É É É É É É É É É É É É É É É É É É É É É É É É ZONE X VIEW MRF1511NT1 12 PACKAGE DIMENSIONS 0.35 (0.89 " NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14 ...

Page 13

... Modified data sheet to reflect MSL rating change from result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516 • Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software Device Data Freescale Semiconductor REVISION HISTORY Description MRF1511NT1 13 ...

Page 14

... RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF1511NT1 Document Number: MRF1511N Rev. 8, 6/2009 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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