MRFG35002N6AT1 Freescale Semiconductor, MRFG35002N6AT1 Datasheet

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MRFG35002N6AT1

Manufacturer Part Number
MRFG35002N6AT1
Description
TRANS RF 1.5W 6V PWR FET PLD-1.5
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFG35002N6AT1

Transistor Type
pHEMT FET
Frequency
3.55GHz
Gain
10dB
Voltage - Rated
8V
Current Rating
1.7A
Current - Test
65mA
Voltage - Test
6V
Power - Output
1.5W
Package / Case
PLD-1.5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFG35002N6AT1
Manufacturer:
Marki
Quantity:
1 400
© Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: V
• 1.5 Watts P1dB @ 3550 MHz, CW
Features
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain- Source Voltage
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Thermal Resistance, Junction to Case
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
65 mA, P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Select Documentation/Application Notes - AN1955.
Power Gain — 10 dB
Drain Efficiency — 26.5%
ACPR @ 5 MHz Offset — - 42 dBc in 3.84 MHz Channel Bandwidth
out
= 158 mWatts Avg., 3550 MHz, Channel Bandwidth =
(1)
Characteristic
Rating
DD
= 6 Volts, I
DQ
=
Symbol
Symbol
V
R
V
T
T
P
DSS
θJC
GS
stg
ch
Document Number: MRFG35002N6A
in
MRFG35002N6AT1
CASE 466 - 03, STYLE 1
3.5 GHz, 1.5 W, 6 V
- 65 to +150
GaAs PHEMT
Value
POWER FET
Value
13.7
175
22
PLASTIC
- 5
PLD - 1.5
8
(2)
MRFG35002N6AT1
Rev. 2, 6/2009
°C/W
Unit
dBm
Unit
Vdc
Vdc
°C
°C
1

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MRFG35002N6AT1 Summary of contents

Page 1

... Freescale Semiconductor Document Number: MRFG35002N6A MRFG35002N6AT1 = 6 Volts Symbol V DSS stg T ch Symbol R θJC Rev. 2, 6/2009 3.5 GHz, 1 POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Value Unit 8 Vdc - 5 Vdc 22 dBm - 65 to +150 °C 175 °C (2) Value Unit 13.7 °C/W MRFG35002N6AT1 1 ...

Page 2

... W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 ohm system Compression Point, CW out MRFG35002N6AT1 2 Rating 3 = 25°C unless otherwise noted) A Symbol I DSS ...

Page 3

... Z11 OUTPUT Z9 Z10 Z12 Z13 Z14 C24 C23 = 3.5 r Part Number Manufacturer ATC100A130JT500XT ATC 08051J1R2BBS AVX 08051J0R7BBS AVX 08051J5R6BBS AVX ATC100A100JT500XT ATC ATC100A101JT500XT ATC ATC100B101JT500XT ATC ATC100B102JT50XT ATC ATC200B103KT50XT ATC ATC200B393KT50XT ATC GRM55DR61H106KA88B Murata 08051J0R2BBS AVX CRCW12061000FKEA Vishay MRFG35002N6AT1 V SUPPLY C14 3 ...

Page 4

... C13 C12 C11 C10 Figure 2. MRFG35002N6A Test Circuit Component Layout MRFG35002N6AT1 C14 C17 C16 C15 C18 C19 C20 C22 C21 C23 C24 MRFG35002N6A Rev Device Data Freescale Semiconductor ...

Page 5

... OUTPUT POWER (dBm) out Figure 4. Single - Channel W - CDMA Adjacent Vdc mA 158 out Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 8 0.01% Probability (CCDF η D 3500 3550 3600 f, FREQUENCY (MHz) and Drain Efficiency versus Frequency −5 −10 −15 −20 − 3650 MRFG35002N6AT1 5 ...

Page 6

... Channel Power Ratio and IRL versus Frequency −5 −10 −15 −20 −25 −30 −35 14 Figure 7. Single - Channel OFDM Error Vector Magnitude NOTE: Data is generated from the test circuit shown. MRFG35002N6AT1 6 TYPICAL CHARACTERISTICS Vdc mA 158 out Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 8 ...

Page 7

... MRFG35002N6AT1 7 ...

Page 8

... MRFG35002N6AT1 Vdc mA 25°C, 50 Ohm System) (continued ∠ φ 1.197 14.0 0.043 1.189 12.4 0.043 1.182 10 ...

Page 9

... S 0.006 0.012 0.15 U 0.006 0.012 0.15 ZONE V 0.000 0.021 0.00 ZONE W 0.000 0.010 0.00 ZONE X 0.000 0.010 0.00 MRFG35002N6AT1 0.115 2.92 inches mm MAX 6.73 5.97 1.83 3.81 0.66 1.12 1.78 1.60 4.57 7.24 6.48 6.10 0.20 1.60 5.33 0.31 ...

Page 10

... June 2009 • Modified data sheet to reflect MSL rating change from result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516 MRFG35002N6AT1 10 PRODUCT DOCUMENTATION REVISION HISTORY Description ...

Page 11

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007 - 2009. All rights reserved. MRFG35002N6AT1 11 ...

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