MRFG35003N6AT1 Freescale Semiconductor, MRFG35003N6AT1 Datasheet

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MRFG35003N6AT1

Manufacturer Part Number
MRFG35003N6AT1
Description
TRANSISTOR RF 3W 6V PLD-1.5
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFG35003N6AT1

Transistor Type
pHEMT FET
Frequency
3.55GHz
Gain
10dB
Voltage - Rated
8V
Current Rating
2.9A
Current - Test
180mA
Voltage - Test
6V
Power - Output
3W
Package / Case
PLD-1.5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFG35003N6AT1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: V
• 3 Watts P1dB @ 3550 MHz, CW
Features
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Drain- Source Voltage
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
180 mA, P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Select Documentation/Application Notes - AN1955.
Power Gain — 10 dB
Drain Efficiency — 27%
ACPR @ 5 MHz Offset — - 42.5 dBc in 3.84 MHz Channel Bandwidth
out
= 450 mWatts Avg., 3550 MHz, Channel Bandwidth =
(1)
Test Methodology
Test Methodology
Characteristic
Rating
DD
= 6 Volts, I
DQ
=
Symbol
Symbol
Rating
V
R
V
T
T
P
DSS
θJC
GS
stg
3
ch
in
Document Number: MRFG35003N6A
MRFG35003N6AT1
CASE 466 - 03, STYLE 1
Package Peak
3.5 GHz, 3 W, 6 V
IV (Minimum)
Temperature
A (Minimum)
2 (Minimum)
- 65 to +150
GaAs PHEMT
Value
POWER FET
Class
Value
175
260
5.9
24
PLASTIC
- 5
PLD - 1.5
8
(2)
MRFG35003N6AT1
Rev. 2, 6/2009
°C/W
Unit
dBm
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRFG35003N6AT1 Summary of contents

Page 1

... Rating 3 Rev. 2, 6/2009 3.5 GHz POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Value Unit 8 Vdc - 5 Vdc 24 dBm - 65 to +150 °C 175 °C (2) Value Unit 5.9 °C/W Class 2 (Minimum) A (Minimum) IV (Minimum) Package Peak Unit Temperature 260 °C MRFG35003N6AT1 1 ...

Page 2

... Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 οhm system) V Output Power Compression Point, CW MRFG35003N6AT1 2 = 25°C unless otherwise noted) A Symbol I DSS ...

Page 3

... ATC100A100JT150XT ATC100A101JT150XT ATC100B101JT500XT ATC100B102JT50XT ATC200B103KT50XT ATC200B393KT50XT GRM55DR61H106KA88B 08051J0R7BBS CRCW040250R0FKTA V C14 C13 C12 Z12 OUTPUT Z13 Z14 Z15 Z16 Z17 C20 C22 C21 = 3.5 r Part Number Manufacturer AVX AVX AVX AVX ATC ATC ATC ATC ATC ATC Murata AVX Vishay MRFG35003N6AT1 SUPPLY RF 3 ...

Page 4

... C11 Figure 2. MRFG35003N6A Test Circuit Component Layout MRFG35003N6AT1 4 C10 C9 C14 C13 C8 C15 C7 C16 C17 C6 C5 C18 C4 C19 C22 MRFG350xxxx Rev. 6 C12 C20 C21 RF Device Data Freescale Semiconductor ...

Page 5

... OUTPUT POWER (dBm) out Figure 4. Single - Channel W - CDMA Adjacent Vdc 180 mA 450 out Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 8 0.01% Probability (CCDF η D 3500 3550 3600 f, FREQUENCY (MHz) and Drain Efficiency versus Frequency −5 −10 −15 −20 −25 − 3650 MRFG35003N6AT1 5 ...

Page 6

... Figure 7. Single - Channel OFDM Error Vector Magnitude and Drain Efficiency versus Output Power NOTE: Data is generated from the test circuit shown. MRFG35003N6AT1 6 TYPICAL CHARACTERISTICS Vdc 180 mA 450 out Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, PAR = 8 ...

Page 7

... MRFG35003N6AT1 7 ...

Page 8

... MRFG35003N6AT1 Vdc 180 mA 25°C, 50 Ohm System) (continued ∠ φ 0.787 32.3 0.023 0.780 31.1 0.023 ...

Page 9

... S 0.006 0.012 0.15 U 0.006 0.012 0.15 ZONE V 0.000 0.021 0.00 ZONE W 0.000 0.010 0.00 ZONE X 0.000 0.010 0.00 MRFG35003N6AT1 0.115 2.92 inches mm MAX 6.73 5.97 1.83 3.81 0.66 1.12 1.78 1.60 4.57 7.24 6.48 6.10 0.20 1.60 5.33 0.31 ...

Page 10

... June 2009 • Modified data sheet to reflect MSL rating change from result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516 MRFG35003N6AT1 10 PRODUCT DOCUMENTATION REVISION HISTORY Description ...

Page 11

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007 - 2009. All rights reserved. MRFG35003N6AT1 11 ...

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