MRF6V2010NBR1 Freescale Semiconductor, MRF6V2010NBR1 Datasheet
MRF6V2010NBR1
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MRF6V2010NBR1 Summary of contents
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... RF POWER MOSFETs CASE 1265- -09, STYLE 1 TO- -270- -2 PLASTIC MRF6V2010NR1 CASE 1337- -04, STYLE 1 TO- -272- -2 PLASTIC MRF6V2010NBR1 Symbol Value Unit V --0.5, +110 Vdc DSS V --0.5, +10 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R 3.0 °C/W θJC MRF6V2010NR1 MRF6V2010NBR1 1 ...
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... Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V2010NR1 MRF6V2010NBR1 2 Rating 3 = 25° ...
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... Part Number Manufacturer 2743021447 Fair--Rite ATC100B102JT50XT ATC T491D106K035AT Kemet T491X226K035AT Kemet ATC200B393KT50XT ATC ATC200B223KT50XT ATC CDR33BX104AKYS Kemet C1825C225J5RAC Kemet 27271SL Johanson ATC100B120JT500XT ATC ESMG630ELL471MK205 United Chemi--Con ATC100B270JT500XT ATC B06T CoilCraft 1812SMS--82NJ CoilCraft CRCW1206120RFKEA Vishay MRF6V2010NR1 MRF6V2010NBR1 V SUPPLY C16 3 ...
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... MRF6V2010N/NB Rev. 3 Figure 2. MRF6V2010NR1(NBR1) Test Circuit Component Layout MRF6V2010NR1 MRF6V2010NBR1 C12 R1 C11 C8 L1 C10 C9 C14 B2 C13 C15 L2 C16 C18 C17 L3 RF Device Data Freescale Semiconductor ...
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... Figure 8. CW Output Power versus Input Power = 25° DRAIN--SOURCE VOLTAGE (VOLTS) DS Figure 4. DC Safe Operating Area = Vdc 220 MHz OUTPUT POWER (WATTS) CW out P3dB = 40.87 dBm (12 Vdc 220 MHz INPUT POWER (dBm) in MRF6V2010NR1 MRF6V2010NBR1 100 200 10 20 Ideal Actual 23 5 ...
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... 220 MHz η 450 MHz η 450 MHz OUTPUT POWER (WATTS) CW out Figure 12. Power Gain and Drain Efficiency versus CW Output Power MRF6V2010NR1 MRF6V2010NBR1 6 TYPICAL CHARACTERISTICS 220 MHz Figure 10. Power Output versus Power Input --30_C --30_C C η 25_C D 85_C Vdc ...
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... MHz Ω 220 20 + j25 75 + j44 Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load Ω 220 MHz Z load Z load Ω Output Matching Network MRF6V2010NR1 MRF6V2010NBR1 7 ...
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... V Tantalum Capacitor C11 16 pF Chip Capacitor C17 330 μ Electrolytic Capacitor L1 17.5 nH Inductor L2 Inductors L3 35.5 nH Inductor Inductor R1 100 Ω, 1/4 W Chip Resistor PCB PCB Material 0.030” MRF6V2010NR1 MRF6V2010NBR1 8 C6 C14 C5 C13 C11 C3 C2 C12 Description 2743021447 ATC100B102JT50XT 27271SL ATC100B270JT500XT ...
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... CuClad 250GX--0300--55--22, 0.030″, ε C16 C18 B2 C17 L4 C19 C15 C12 C13 L2 L3 C14 450 MHz Rev. 1 Part Number Manufacturer Fair--Rite ATC ATC Kemet Kemet ATC ATC Kemet Kemet ATC Multicomp Illinois Cap CoilCraft CoilCraft CoilCraft Vishay Arlon = 2.55 r MRF6V2010NR1 MRF6V2010NBR1 9 ...
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... C12 68 pF Chip Capacitor C13 27 pF Chip Capacitor C21 330 μ Electrolytic Capacitor L1 17.5 nH Inductor Inductor L3, L4, L5 Inductors R1 180 Ω, 1/4 W Chip Resistor PCB PCB Material 0.030″ MRF6V2010NR1 MRF6V2010NBR1 10 C7 C18 C8 C6 C16 C12 C13 Description 2743021447 ATC100B102JT50XT ATC100B910JT500XT ATC100B220JT500XT ...
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... Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load f = 450 MHz Z load f = 220 MHz Z load f = 130 MHz Z load MHz Z load Z load Ω Output Matching Network MRF6V2010NR1 MRF6V2010NBR1 11 ...
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... MRF6V2010NR1 MRF6V2010NBR1 12 50 OHM TYPICAL CHARACTERISTICS ( mA 25°C, 50 Ohm System ∠ φ 11.520 175.6 0.000790 11.419 171.6 ...
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... ∠ φ ∠ φ 22 --31.1 0.932 --107.6 --32.1 0.934 --109.0 --33.1 0.935 --110.4 --33.8 0.936 --111.7 --34.8 0.938 --112.9 --35.9 0.939 --114.1 MRF6V2010NR1 MRF6V2010NBR1 13 ...
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... MRF6V2010NR1 MRF6V2010NBR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 15 ...
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... MRF6V2010NR1 MRF6V2010NBR1 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 17 ...
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... MRF6V2010NR1 MRF6V2010NBR1 18 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 19 ...
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... Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software MRF6V2010NR1 MRF6V2010NBR1 20 REVISION HISTORY Description and Z values, Fig ...
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... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007--2008, 2010. All rights reserved. MRF6V2010NR1 MRF6V2010NBR1 21 ...