MRF6S20010GNR1 Freescale Semiconductor, MRF6S20010GNR1 Datasheet - Page 8

• Manufacturer Part Number: MRF6S20010GNR1
• Description: MOSFET RF N-CH 28V 10W TO2704 GW
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010GNR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

8
MRF6S20010NR1 MRF6S20010GNR1
W - CDMA TYPICAL CHARACTERISTICS
15.8
15.6
15.4
15.2
14.8
14.6
14.4
14.2
Figure 13. 2 - Carrier W - CDMA Broadband Performance
Figure 14. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
16
15
14
49
42
35
28
21
14
2060
7
0
0.1
V
f1 = 2165 MHz, f2 = 2175 MHz
2−Carrier W−CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
DD
DD
G
and Drain Efficiency versus Output Power
ps
2080
= 28 Vdc, I
= 28 Vdc, P
IM3
2100
T
P
C
DQ
out
= 25_C
out
, OUTPUT POWER (WATTS) AVG.
@ P
= 130 mA
= 1 W (Avg.), I
2120
f, FREQUENCY (MHz)
out
1
= 1 Watt Avg.
2140
η
D
DQ
ACPR
= 130 mA
2160
2180
— 2110 - 2170 MHz
2200
10
ACPR
η
IRL
G
IM3
D
ps
2220
20
18
17
16
15
14
−45
−47
−49
−51
−53
−55
−20
−25
−30
−35
−40
−45
−50
−55
−10
−12
−14
−16
−18
Freescale Semiconductor
RF Device Data