MRFE6S9046NR1 Freescale Semiconductor, MRFE6S9046NR1 Datasheet - Page 6
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MRFE6S9046NR1
Manufacturer Part Number
MRFE6S9046NR1
Description
MOSFET RF N-CH 45W TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet
1.MRFE6S9046GNR1.pdf
(21 pages)
Specifications of MRFE6S9046NR1
Transistor Type
N-Channel
Frequency
960MHz
Gain
19dB
Voltage - Rated
66V
Current Rating
10µA
Current - Test
300mA
Voltage - Test
28V
Power - Output
35.5W
Package / Case
TO-270-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
66V
Output Power (max)
17.8W
Power Gain (typ)@vds
19dB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
TO-270 WB GULL
Pin Count
5
Input Capacitance (typ)@vds
120@28VpF
Output Capacitance (typ)@vds
318@28VpF
Reverse Capacitance (typ)
0.9@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
57%
Mounting
Surface Mount
Mode Of Operation
CDMA/GSM/GSM EDGE
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRFE6S9046NR1
Manufacturer:
UMS
Quantity:
1 400
MRFE6S9046NR1 MRFE6S9046GNR1
6
21
20
19
18
17
16
15
1
225 mA
150 mA
300 mA
Figure 6. Power Gain versus Output Power
I
DQ
= 450 mA
P
out
, OUTPUT POWER (WATTS) CW
375 mA
10
Figure 5. Power Gain, Input Return Loss, EVM and Drain
19.5
19.4
19.3
19.2
19.1
18.9
18.8
18.7
18.6
18.5
19.6
19.5
19.4
19.3
19.2
19.1
18.9
18.8
18.7
18.6
Efficiency versus Frequency @ P
19
19
Efficiency versus Frequency @ P
V
f = 940 MHz
Figure 4. Power Gain, Input Return Loss and Drain
920
920
DD
G
= 28 Vdc
IRL
ps
925
925
TYPICAL CHARACTERISTICS
EVM
η
D
930
930
V
DD
G
= 28 Vdc, P
IRL
ps
V
I
DQ
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
DD
935
935
= 285 mA, EDGE Modulation
100
= 28 Vdc, P
η
D
out
940
940
= 35.5 W CW, I
out
−10
−20
−30
−40
−50
−60
−70
945
= 17.8 W (Avg.)
945
out
0.1
out
Figure 7. Intermodulation Distortion Products
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
= 17.8 Watts Avg.
= 35.5 Watts CW
DD
DQ
950
950
= 28 Vdc, P
= 300 mA
955
955
versus Two - Tone Spacing
out
TWO−TONE SPACING (MHz)
960
960
= 44 W (PEP), I
1
58
57
56
55
54
53
52
51
50
49
48
42
41
40
39
38
6
5
4
3
2
1
IM7−L
IM7−U
Freescale Semiconductor
DQ
−16
−19
−22
−25
−28
−31
IM5−U
= 300 mA
−15
−20
−25
−30
−35
−40
10
IM3−L
IM5−L
RF Device Data
IM3−U
100