MRF9060NR1 Freescale Semiconductor, MRF9060NR1 Datasheet - Page 2

• Manufacturer Part Number: MRF9060NR1
• Description: IC MOSFET RF N-CHAN TO270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF9060NR1

• Transistor Type: N-Channel
• Frequency: 945MHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 450mA
• Voltage - Test: 26V
• Power - Output: 60W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

2
MRF9060NR1 MRF9060NBR1
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Human Body Model
Machine Model
Charge Device Model
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
DS
DS
= 65 Vdc, V
= 26 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
D
GS
GS
= 200 μAdc)
= 450 mAdc)
= 1.3 Adc)
= 4 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Characteristic
Test Methodology
Test Conditions
(T
C
= 25°C unless otherwise noted)
GS
GS
GS
MRF9060NR1
MRF9060NBR1
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
MRF9060NR1
MRF9060NBR1
Symbol
V
V
V
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
DSS
DSS
GSS
g
oss
rss
iss
fs
Rating
1
3
Min
—
—
—
—
—
—
—
—
2
3
Package Peak Temperature
0.21
Typ
101
2.8
3.7
5.3
2.5
53
—
—
—
M2 (Minimum)
C6 (Minimum)
C5 (Minimum)
260
260
1 (Minimum)
Class
Freescale Semiconductor
Max
0.4
10
—
—
—
—
1
1
4
5
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Unit
pF
pF
pF
°C
S