MRF9030LR1 Freescale Semiconductor, MRF9030LR1 Datasheet

IC MOSFET RF N-CHAN NI-360

MRF9030LR1

Manufacturer Part Number
MRF9030LR1
Description
IC MOSFET RF N-CHAN NI-360
Manufacturer
Freescale Semiconductor
Datasheets

Specifications of MRF9030LR1

Transistor Type
N-Channel
Frequency
945MHz
Gain
19dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
250mA
Voltage - Test
26V
Power - Output
30W
Package / Case
NI-360
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Power Gain (typ)@vds
19dB
Frequency (max)
1GHz
Package Type
NI-360
Pin Count
3
Forward Transconductance (typ)
3S
Input Capacitance (typ)@vds
49.5@26VpF
Output Capacitance (typ)@vds
26.5@26VpF
Reverse Capacitance (typ)
1@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone
Number Of Elements
1
Power Dissipation (max)
92000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF9030LR1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF9030LR1
Manufacturer:
FREESCALE
Quantity:
20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common - source amplifier applications in
26 volt base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 4
Motorola, Inc. 2003
MOTOROLA RF DEVICE DATA
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with frequen-
Output Power
Derate above 25°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — - 32.5 dBc
C
= 25°C
Test Conditions
Characteristic
Freescale Semiconductor, Inc.
Rating
For More Information On This Product,
Go to: www.freescale.com
MRF9030LR1
MRF9030LSR1
MRF9030LR1
MRF9030LSR1
Symbol
Symbol
V
R
V
T
P
T
DSS
stg
θJC
GS
D
J
MRF9030LSR1
MRF9030LR1
LATERAL N - CHANNEL
CASE 360B - 05, STYLE 1
CASE 360C - 05, STYLE 1
RF POWER MOSFETs
MRF9030LR1 MRF9030LSR1
945 MHz, 30 W, 26 V
M1 (Minimum)
1 (Minimum)
- 65 to +150
BROADBAND
- 0.5, + 15
MRF9030LSR1
MRF9030LR1
Class
Value
0.53
0.67
Max
117
200
1.9
1.5
68
92
NI - 360S
NI - 360
Order this document
by MRF9030/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

Related parts for MRF9030LR1

MRF9030LR1 Summary of contents

Page 1

... MRF9030LR1 MRF9030LSR1 945 MHz LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 360 MRF9030LR1 CASE 360C - 05, STYLE 360S MRF9030LSR1 Value Unit 68 Vdc - 0. Vdc 92 Watts 0.53 W/°C 117 0. +150 °C 200 °C Max Unit 1.9 °C/W 1.5 Class 1 (Minimum) M1 (Minimum) MRF9030LR1 MRF9030LSR1 1 ...

Page 2

... GS D Forward Transconductance ( Vdc Adc DYNAMIC CHARACTERISTICS Input Capacitance ( Vdc ± 30 mV(rms) MHz Output Capacitance ( Vdc ± 30 mV(rms) MHz Reverse Transfer Capacitance ( Vdc ± 30 mV(rms) MHz MRF9030LR1 MRF9030LSR1 2 = 25°C unless otherwise noted) C Symbol Min I DSS I DSS I GSS V GS(th) V GS(Q) V DS(on ...

Page 3

... IMD — IRL — G — ps η — IMD — IRL — P — 1dB G — ps η — Ψ Go to: www.freescale.com Typ Max Unit 19 — dB 41.5 — 32 dBc - 15 — dB 41.5 — — dBc - 14 — — — — Degradation In Output Power MRF9030LR1 MRF9030LSR1 3 ...

Page 4

... Trim Capacitor C17 220 µ Electrolytic Capacitor L1, L2 12.5 nH Surface Mount Inductors Z1 0.260″ x 0.060″ Microstrip Z2 0.240″ x 0.060″ Microstrip Figure 1. 945 MHz Broadband Test Circuit Schematic INPUT Figure 2. 945 MHz Broadband Test Circuit Component Layout MRF9030LR1 MRF9030LSR1 DUT ...

Page 5

... Figure 7. Power Gain and Efficiency versus Go to: www.freescale.com −30 −10 −32 −12 −34 −14 −36 −16 −38 −18 960 I = 200 mA DQ 250 mA 300 mA 375 mA 10 100 P , OUTPUT POWER (WATTS) PEP out Output Power G ps η 100 , OUTPUT POWER (WATTS) AVG. Output Power MRF9030LR1 MRF9030LSR1 ...

Page 6

... Freescale Semiconductor, Inc Figure 8. Power Gain, Efficiency and IMD MRF9030LR1 MRF9030LSR1 Vdc η 250 945 MHz 945.1 MHz IMD 1 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power For More Information On This Product, Go to: www.freescale.com −20 −40 −60 MOTOROLA RF DEVICE DATA ...

Page 7

... Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground. Output Device Matching Under Network Test Z Z source load Go to: www.freescale.com MRF9030LR1 MRF9030LSR1 7 ...

Page 8

... Freescale Semiconductor, Inc. MRF9030LR1 MRF9030LSR1 8 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 9

... Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF9030LR1 MRF9030LSR1 9 ...

Page 10

... Freescale Semiconductor, Inc. MRF9030LR1 MRF9030LSR1 10 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 11

... M 0.355 0.365 9.02 9.27 N 0.357 0.363 9.07 9.22 R 0.227 0.23 5.77 5.92 S 0.225 0.235 5.72 5.97 aaa 0.005 REF 0.13 REF bbb 0.010 REF 0.25 REF ccc 0.015 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF9030LR1 MRF9030LSR1 11 ...

Page 12

... E Motorola Inc. 2003 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 MRF9030LR1 MRF9030LSR1 ◊ 12 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N ...

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