MRF5S9080NR1 Freescale Semiconductor, MRF5S9080NR1 Datasheet

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MRF5S9080NR1

Manufacturer Part Number
MRF5S9080NR1
Description
MOSFET RF N-CH 26V 80W TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF5S9080NR1

Transistor Type
N-Channel
Frequency
960MHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
600mA
Voltage - Test
26V
Power - Output
90W
Package / Case
TO-270-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF5S9080NR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
GSM Application
• Typical GSM Performance: V
GSM EDGE Application
• Typical GSM EDGE Performance: V
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200_C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Freescale Semiconductor
Technical Data
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
D e s i g n e d f o r G S M a n d G S M E D G E b a s e s t a t i o n a p p l i c a t i o n s w i t h
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz).
P
921 - 960 MHz).
Output Power
Case Temperature 79°C, 80 W CW
Case Temperature 80°C, 36 W CW
out
Power Gain — 18.5 dB
Drain Efficiency — 60%
Power Gain — 19 dB
Drain Efficiency — 42%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 2.5% rms
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 36 Watts Avg., Full Frequency Band (869 - 894 MHz or
DD
Characteristic
= 26 Volts, I
Rating
DD
DD
Operation
= 26 Volts, I
DQ
= 600 mA, P
DQ
= 550 mA,
out
= 80 Watts
Symbol
Symbol
V
R
V
T
DSS
T
θJC
GS
stg
CASE 1486 - 03, STYLE 1
J
Document Number: MRF5S9080N
MRF5S9080NBR1
MRF5S9080NR1
MRF5S9080NR1 MRF5S9080NBR1
TO - 270 WB - 4
MRF5S9080NR1
869 - 960 MHz, 80 W, 26 V
PLASTIC
LATERAL N - CHANNEL
RF POWER MOSFETs
GSM/GSM EDGE
- 65 to +150
Value
- 0.5, +65
- 0.5, +15
Value
0.50
0.54
CASE 1484 - 04, STYLE 1
200
(1,2)
MRF5S9080NBR1
TO - 272 WB - 4
PLASTIC
Rev. 1, 5/2006
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF5S9080NR1 Summary of contents

Page 1

... GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 PLASTIC MRF5S9080NR1 CASE 1484 - 04, STYLE 272 PLASTIC MRF5S9080NBR1 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc +150 °C stg T 200 °C J (1,2) Symbol Value Unit R °C/W θJC 0.50 0.54 MRF5S9080NR1 MRF5S9080NBR1 1 ...

Page 2

... Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V 869- 894 MHz, 920 - 960 MHz GSM EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset 1. Part is internally matched on input. MRF5S9080NR1 MRF5S9080NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I ...

Page 3

... Microstrip Z6 1.567″ x 0.059″ Microstrip Z7 0.734″ x 0.788″ Microstrip Figure 1. MRF5S9080NR1(NBR1) Test Circuit Schematic — 900 MHz Table 6. MRF5S9080NR1(NBR1) Test Circuit Component Designations and Values — 900 MHz Part C1, C2, C3 4.7 μF Chip Capacitors (1812) C4, C5 200B Chip Capacitors ...

Page 4

... C10 C12 Figure 2. MRF5S9080NR1(NBR1) Test Circuit Component Layout — 900 MHz MRF5S9080NR1 MRF5S9080NBR1 C16 R3 C14 C13 C15 C9 C21 C18 C19 C11 C20 C17 C3 C6 MRF5S9080N/NB Rev Device Data Freescale Semiconductor ...

Page 5

... FREQUENCY (MHz Watts CW out Vdc 940 MHz 13 0 100 1000 Figure 6. Power Gain versus Output Power −20 −40 1000 1020 −20 −40 1000 1020 940 MHz 50 100 150 P , OUTPUT POWER (WATTS) CW out MRF5S9080NR1 MRF5S9080NBR1 = 600 mA 200 5 ...

Page 6

... Vdc DD − 600 940 MHz −55 EDGE Modulation −60 −65 −70 −75 − OUTPUT POWER (WATTS) AVG. out Figure 11. Spectral Regrowth @ 400 kHz versus Output Power MRF5S9080NR1 MRF5S9080NBR1 6 TYPICAL CHARACTERISTICS - 900 MHz 70 6 25_C 60 5 85_C Vdc 600 940 MHz 0 ...

Page 7

... Divide 2 MTTF factor by I for MTTF in a particular application. D GSM TEST SIGNAL Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz 200 kHz Figure 14. EDGE Spectrum 210 2 400 kHz 600 kHz Span 2 MHz MRF5S9080NR1 MRF5S9080NBR1 7 ...

Page 8

... MHz f = 845 MHz Z load f = 990 MHz Figure 15. Series Equivalent Source and Load Impedance — 900 MHz MRF5S9080NR1 MRF5S9080NBR1 8 Z source f = 845 MHz = 10 Ω Vdc 600 mA out source load MHz Ω Ω 845 5.31 - j5.59 1.18 - j0.34 865 6.07 - j4.16 1.09 - j0.29 890 5 ...

Page 9

... Microstrip Z6 1.567″ x 0.059″ Microstrip Z7 0.734″ x 0.788″ Microstrip Figure 16. MRF5S9080NR1(NBR1) Test Circuit Schematic — 800 MHz Table 7. MRF5S9080NR1(NBR1) Test Circuit Component Designations and Values — 800 MHz Part C1, C2, C3 4.7 μF Chip Capacitors (1812) C4, C5 200B Chip Capacitors ...

Page 10

... C10 C12 Figure 17. MRF5S9080NR1(NBR1) Test Circuit Component Layout — 800 MHz MRF5S9080NR1 MRF5S9080NBR1 10 C8 C16 R3 C14 C13 C15 C21 C2 C18 C19 C11 C20 C17 C22 MRF5S9080N/NB Rev Device Data Freescale Semiconductor ...

Page 11

... Vdc 550 880 MHz 5 EDGE Modulation 900 910 1 Figure 21. EVM and Drain Efficiency versus 80 η −20 −40 920 940 = 80 Watts 60 η IRL −20 −40 920 940 = 36 Watts η D EVM T = 25_C OUTPUT POWER (WATTS) AVG. out Output Power MRF5S9080NR1 MRF5S9080NBR1 100 11 ...

Page 12

... W Avg. −85 840 850 860 870 880 890 f, FREQUENCY (MHz) Figure 22. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency −65 −70 −75 −80 −85 1 MRF5S9080NR1 MRF5S9080NBR1 12 TYPICAL CHARACTERISTICS - 800 MHz − − 880 MHz Vdc DD EDGE Modulation I = 550 mA −55 ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MRF5S9080NR1 MRF5S9080NBR1 13 ...

Page 14

... MRF5S9080NR1 MRF5S9080NBR1 14 NOTES RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor NOTES MRF5S9080NR1 MRF5S9080NBR1 15 ...

Page 16

... MRF5S9080NR1 MRF5S9080NBR1 16 PACKAGE DIMENSIONS ...

Page 17

... RF Device Data Freescale Semiconductor MRF5S9080NR1 MRF5S9080NBR1 17 ...

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... MRF5S9080NR1 MRF5S9080NBR1 18 RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MRF5S9080NR1 MRF5S9080NBR1 19 ...

Page 20

... P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF5S9080NR1 MRF5S9080NBR1 Document Number: MRF5S9080N Rev. 1, 5/2006 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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