MRF5S21045NR1 Freescale Semiconductor, MRF5S21045NR1 Datasheet

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MRF5S21045NR1

Manufacturer Part Number
MRF5S21045NR1
Description
MOSFET RF N-CH 28V 10W TO270-4
Manufacturer
Freescale Semiconductor
Datasheets

Specifications of MRF5S21045NR1

Transistor Type
N-Channel
Frequency
2.11GHz
Gain
14.5dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
500mA
Voltage - Test
28V
Power - Output
10W
Package / Case
TO-270-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
10W
Power Gain (typ)@vds
14.5dB
Frequency (min)
2.11GHz
Frequency (max)
2.17GHz
Package Type
TO-270 WB EP
Pin Count
5
Forward Transconductance (typ)
3.2S
Reverse Capacitance (typ)
0.9@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
25.5%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA/CDMA/TDMA
Number Of Elements
1
Power Dissipation (max)
130000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF5S21045NR1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF5S21045NR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN- PCS/cellular radio and WLL applications.
• Typical 2-Carrier W-CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Freescale Semiconductor
Technical Data
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W- CDMA base station applications with frequencies from 2110
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Derate above 25°C
Case Temperature 80°C, 45 W CW
Case Temperature 79°C, 10 W CW
out
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
= 10 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
C
= 25°C
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 500 mA,
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
Document Number: MRF5S21045N
CASE 1486-03, STYLE 1
CASE 1484-04, STYLE 1
MRF5S21045NR1 MRF5S21045NBR1
2110-2170 MHz, 10 W AVG., 28 V
MRF5S21045NBR1
MRF5S21045NBR1
MRF5S21045NR1
MRF5S21045NR1
TO-270 WB-4
TO-272 WB-4
LATERAL N-CHANNEL
RF POWER MOSFETs
PLASTIC
PLASTIC
-65 to +150
Value
2 x W-CDMA
-0.5, +68
-0.5, +15
Value
0.74
1.35
1.48
130
200
(1,2)
Rev. 4.1, 12/2009
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
W
1

Related parts for MRF5S21045NR1

MRF5S21045NR1 Summary of contents

Page 1

... CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC MRF5S21045NR1 CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC MRF5S21045NBR1 Symbol Value Unit V -0.5, +68 Vdc DSS V -0.5, +15 Vdc GS P 130 W D 0.74 W/°C °C T -65 to +150 stg °C T 200 J (1,2) Symbol Value Unit °C/W R θJC 1.35 1.48 MRF5S21045NR1 MRF5S21045NBR1 1 ...

Page 2

... Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF5S21045NR1 MRF5S21045NBR1 2 Rating 3 = 25°C unless otherwise noted) A Symbol ...

Page 3

... Microstrip Z5 0.480″ x 1.000″ Microstrip Z6 0.510″ x 0.080″ Microstrip Figure 1. MRF5S21045NR1(NBR1) Test Circuit Schematic Table 6. MRF5S21045NR1(NBR1) Test Circuit Component Designations and Values Part C1 220 nF Chip Capacitor (1812) C2, C3, C7, C12, C13 6.8 pF 100B Chip Capacitors 6.8 μF Chip Capacitors (1812) C4, C5, C14, C15 220 μ ...

Page 4

... R1 C7 Figure 2. MRF5S21045NR1(NBR1) Test Circuit Component Layout MRF5S21045NR1 MRF5S21045NBR1 C13 C14 C15 C6 C10 C11 C12 MRF5S21045N Rev Device Data Freescale Semiconductor ...

Page 5

... Two-Tone Measurements 100 1 Figure 6. Third Order Intermodulation Distortion -28 -10 -13 -32 -36 -16 -40 -19 -22 -44 2220 = 10 Watts out - -22 -14 -26 -30 -17 -20 -34 2220 = 20 Watts out I = 200 mA DQ 800 mA 650 mA 500 mA 350 Vdc OUTPUT POWER (WATTS) PEP out versus Output Power MRF5S21045NR1 MRF5S21045NBR1 100 5 ...

Page 6

... Probability (CCDF -30_C ps C 85_C OUTPUT POWER (WATTS) AVG. out Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power MRF5S21045NR1 MRF5S21045NBR1 6 TYPICAL CHARACTERISTICS P1dB = 47.60 dBm (57 100 28 Figure 8. Pulse CW Output Power versus 17 -10 25_C 85_C -30_C IM3 85_C C ...

Page 7

... MTTF in a particular application. D W-CDMA TEST SIGNAL +20 +30 0 -10 -20 -30 -40 -50 -60 -IM3 in 3.84 MHz BW - 190 200 210 2 3.84 MHz Channel BW -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW +IM3 in 3.84 MHz BW -15 - FREQUENCY (MHz) Figure 14. 2‐Carrier W‐CDMA Spectrum MRF5S21045NR1 MRF5S21045NBR1 ...

Page 8

... Z Z Figure 15. Series Equivalent Source and Load Impedance MRF5S21045NR1 MRF5S21045NBR1 Ω 2200 MHz f = 2000 MHz Z load f = 2000 MHz f = 2200 MHz Vdc 500 mA Avg out source load Ω Ω MHz 2000 8.15 - j5.91 4.78 - j5.19 2110 7.07 - j7.32 4.04 - j4.14 2140 6.28 - j7.71 3 ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF5S21045NR1 MRF5S21045NBR1 9 ...

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... MRF5S21045NR1 MRF5S21045NBR1 10 RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MRF5S21045NR1 MRF5S21045NBR1 11 ...

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... MRF5S21045NR1 MRF5S21045NBR1 12 RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MRF5S21045NR1 MRF5S21045NBR1 13 ...

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... MRF5S21045NR1 MRF5S21045NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History • Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change 4.1 Dec. 2009 Notification number, PCN12779 Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF5S21045NR1 MRF5S21045NBR1 15 ...

Page 16

... RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program http://www.freescale.com/epp. MRF5S21045NR1 MRF5S21045NBR1 Document Number: MRF5S21045N Rev. 4.1, 12/2009 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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