MRF7P20040HSR3 Freescale Semiconductor, MRF7P20040HSR3 Datasheet

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MRF7P20040HSR3

Manufacturer Part Number
MRF7P20040HSR3
Description
MOSFET RF N-CH 40W NI780HS-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7P20040HSR3

Transistor Type
2 N-Channel (Dual)
Frequency
2.03GHz
Gain
18.2dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
150mA
Voltage - Test
32V
Power - Output
10W
Package / Case
NI-780HS-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7P20040HSR3
Manufacturer:
FREESCALE
Quantity:
1 400
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
2200 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW
• Typical P
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 2. Thermal Characteristics
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 1800 to
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/-
I
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
and Common Source S--Parameters
Operation
For R5 Tape and Reel option, see p. 15.
DQA
Derate above 25°C
Case Temperature 78°C, 10 W CW, 32 Vdc, I
Case Temperature 82°C, 40 W CW
calculators by product.
Application Notes -- AN1955.
= 150 mA, V
Frequency
2025 MHz
out
@ 3 dB Compression Point ≃ 50 Watts CW
C
Rating
GSB
= 25°C
= 1.5 Vdc, P
(dB)
18.2
G
ps
(2,3)
(1)
Characteristic
, 32 Vdc, I
out
42.6
(%)
η
= 10 Watts Avg., IQ Magnitude
D
DQA
DQA
Symbol
= 150 mA, V
Output PAR
V
V
V
T
CW
T
DSS
T
= 150 mA, V
stg
GS
DD
C
J
(dB)
7.3
out
)
-- 65 to +150
GSB
--0.5, +65
--6.0, +10
(1)
DD
32, +0
Value
GSB
42.4
0.17
150
225
= 1.5 Vdc, 2017.5 MHz
= 32 Volts,
ACPR
(dBc)
--34.8
= 1.5 Vdc, 2017.5 MHz
W/°C
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
(1)
Document Number: MRF7P20040H
RF
RF
MRF7P20040HR3 MRF7P20040HSR3
CASE 465H- -02, STYLE 1
2010- -2025 MHz, 10 W AVG., 32 V
CASE 465M- -01, STYLE 1
inA
inB
MRF7P20040HSR3
MRF7P20040HR3
/V
/V
Symbol
MRF7P20040HSR3
Figure 1. Pin Connections
GSA
MRF7P20040HR3
GSB
R
LATERAL N- -CHANNEL
θJC
RF POWER MOSFETs
NI- -780S- -4
NI- -780- -4
SINGLE W- -CDMA
3
4
(Top View)
Value
1.50
2.11
(3,4)
Rev. 2, 12/2010
1
2 RF
RF
outA
outB
°C/W
Unit
/V
/V
DSA
DSB
1

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MRF7P20040HSR3 Summary of contents

Page 1

... SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFETs CASE 465M- -01, STYLE 1 NI- -780- -4 MRF7P20040HR3 CASE 465H- -02, STYLE 1 NI- -780S- -4 MRF7P20040HSR3 inA GSA outA DSA inB GSB outB DSB (Top View) Figure 1. Pin Connections (3,4) Symbol Value Unit R °C/W θJC 2.11 1.50 MRF7P20040HR3 MRF7P20040HSR3 1 ...

Page 2

... Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in a Symmetrical Doherty configuration. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF7P20040HR3 MRF7P20040HSR3 2 = 25°C unless otherwise noted) A Symbol ...

Page 3

... Rev. 1 Description ATC600F120FT250XT ATC600F2R4AT250XT ATC600F270FT250XT ATC600F1R1AT250XT ATC100B120FT1500XT C3225X7R1H225KT GRM43ER61H475MA88L GRM55DR61H106KA88L ATC600F0R8AT250XT CRCW12061000FKEA CRCW120612R0FKEA = 3.5 RO4350B r V DSA C15 C17 C9 C10 C19 C18 C16 V DSB Part Number Manufacturer ATC ATC ATC ATC ATC TDK Murata Murata ATC Vishay Vishay Rogers MRF7P20040HR3 MRF7P20040HSR3 3 ...

Page 4

... MRF7P20040HR3 MRF7P20040HSR3 4 Single--ended λ λ Quadrature combined λ λ λ λ Doherty 4 4 λ λ λ λ Push--pull Possible Circuit Topologies Figure 3. RF Device Data Freescale Semiconductor ...

Page 5

... Input Signal PAR = 9 0.01% Probability on CCDF OUTPUT POWER (WATTS) out Figure 6. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power --28 --14 --1.8 --30 --2 --16 --32 --2.2 --18 --34 --2.4 --20 --36 --2.6 --22 --38 --2.8 --24 2020 2040 100 --26 48 η --28 40 --30 ACPR --32 36 --34 32 PARC -- MRF7P20040HR3 MRF7P20040HSR3 5 ...

Page 6

... PAR = 9 0.01% 16 Probability on CCDF 15 Figure 7. Single- -Carrier W- -CDMA Power Gain, Drain --4 1450 MRF7P20040HR3 MRF7P20040HSR3 6 TYPICAL CHARACTERISTICS 2017.5 MHz f = 2010 MHz 2025 MHz 2010 MHz = 32 Vdc 150 mA DD DQA = 1.5 Vdc, Single--Carrier GSB η D 2025 MHz 2017.5 MHz ACPR ...

Page 7

... RF Device Data Freescale Semiconductor W- -CDMA TEST SIGNAL 10 0 --10 --20 --30 --40 --50 --60 --ACPR in 3.84 MHz Integrated BW --70 -- --90 --100 --9 --7.2 Figure 10. Single- -Carrier W- -CDMA Spectrum 3.84 MHz Channel BW +ACPR in 3.84 MHz Integrated BW --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 f, FREQUENCY (MHz) MRF7P20040HR3 MRF7P20040HSR3 9 7 ...

Page 8

... Figure 11. Series Equivalent Source and Load Impedance — Carrier Side Figure 12. Series Equivalent Source and Load Impedance — Peaking Side MRF7P20040HR3 MRF7P20040HSR3 Vdc 150 mA 1.5 Vdc Avg. DD DQA GSB out source load MHz Ω Ω 1995 6.80 -- j13.11 14.67 + j4.09 2000 6 ...

Page 9

... Test Impedances per Compression Level f Z source (MHz) Ω 2010 P1dB 2.49 -- j18.56 2025 P1dB 2.66 -- j19.78 Figure 13. Pulsed CW Output Power versus Input Power @ 32 V Ideal Actual f = 2025 MHz P3dB dBm 44.9 44.9 Z load Ω 15.82 -- j0.28 15.78 + j0.52 MRF7P20040HR3 MRF7P20040HSR3 9 ...

Page 10

... Test circuit impedance as measured from drain contact to load ground. Input Device Load Pull Under Tuner Test Z Z source load Figure 14. Carrier Side Load Pull Performance — Maximum P3dB Tuning MRF7P20040HR3 MRF7P20040HSR3 Max Eff. Z load MHz % Ω 1805 66.6 17.1 -- j7.9 1880 70.1 14 ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7P20040HR3 MRF7P20040HSR3 11 ...

Page 12

... MRF7P20040HR3 MRF7P20040HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF7P20040HR3 MRF7P20040HSR3 13 ...

Page 14

... MRF7P20040HR3 MRF7P20040HSR3 14 RF Device Data Freescale Semiconductor ...

Page 15

... Load Pull Performance — Maximum Efficiency Tuning to show load pull data for expanded frequency range presented overview paragraph Device Data Freescale Semiconductor R5 TAPE AND REEL OPTION REVISION HISTORY Description = thermal resistance values changed from out 2.9 to 2.11_C/W and thermal resistance value changed from 2.3 to GSB out MRF7P20040HR3 MRF7P20040HSR3 15 ...

Page 16

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7P20040HR3 MRF7P20040HSR3 Document Number: MRF7P20040H Rev. 2, 12/2010 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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