MRF6V2150NR1 Freescale Semiconductor, MRF6V2150NR1 Datasheet - Page 2

• Manufacturer Part Number: MRF6V2150NR1
• Description: MOSFET RF N-CH TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2150NR1

• Transistor Type: N-Channel
• Frequency: 220MHz
• Gain: 25dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 450mA
• Voltage - Test: 50V
• Power - Output: 150W
• Package / Case: TO-270-4
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

2
MRF6V2150NR1 MRF6V2150NBR1
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Typical Performances (In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) V
Per JESD22--A113, IPC/JEDEC J--STD--020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Drain--Source Breakdown Voltage
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
Power Gain
Drain Efficiency
Input Return Loss
(V
(V
(I
(V
(V
(V
(V
(V
(V
(V
D
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 75 mA, V
= 100 Vdc, V
= 50 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
GS
DS
D
D
D
GS
GS
= 0 Vdc)
= 400 μAdc)
= 450 mAdc, Measured in Functional Test)
= 1 Adc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
Test Methodology
ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
Characteristic
(T
A
f = 27 MHz
f = 450 MHz
f = 27 MHz
f = 450 MHz
f = 27 MHz
f = 450 MHz
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DQ
V
Symbol
V
Rating
V
V
(BR)DSS
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
= 450 mA, P
G
G
IRL
IRL
DSS
DSS
GSS
η
η
3
oss
rss
iss
ps
ps
D
D
DD
out
23.5
Min
110
Package Peak Temperature
1.5
66
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
= 50 Vdc, I
= 150 W, f = 220 MHz, CW
--10.6
--17.6
DQ
1.62
0.26
68.3
32.3
22.9
78.7
57.6
260
Typ
163
--17
2.6
1.6
93
25
—
—
—
—
= 450 mA, P
Freescale Semiconductor
Max
26.5
2.5
3.5
50
10
—
—
—
—
—
—
--9
—
—
—
—
—
—
3
out
RF Device Data
= 150 W CW
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
mA
dB
dB
dB
dB
°C
pF
pF
pF
%
%