MRF6S18100NR1 Freescale Semiconductor, MRF6S18100NR1 Datasheet - Page 6

• Manufacturer Part Number: MRF6S18100NR1
• Description: MOSFET RF N-CH 28V 100W TO2704
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S18100NR1

• Transistor Type: N-Channel
• Frequency: 1.99GHz
• Gain: 14.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 100W
• Package / Case: TO-270-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

6
MRF6S18100NR1 MRF6S18100NBR1
−40
−45
−50
−55
−60
−65
−70
−75
18
16
14
12
10
12
10
8
8
6
4
2
0
1
1
0
V
I
f = 1960 MHz
DQ
V
I
f = 1960 MHz
EDGE Modulation
V
f = 1960 MHz, EDGE Modulation
DQ
DD
Figure 9. EVM and Drain Efficiency versus
Figure 7. Power Gain and Drain Efficiency
DD
DD
= 900 mA
Figure 11. Spectral Regrowth at 400 kHz
= 28 Vdc
= 700 mA
T
= 28 Vdc
= 28 Vdc, I
C
= −30_C
20
P
versus CW Output Power
P
G
out
out
DQ
ps
P
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) AVG.
versus Output Power
out
= 700 mA
, OUTPUT POWER (WATTS)
Output Power
−30_C
85_C
25_C
40
10
10
TYPICAL CHARACTERISTICS
η
EVM
D
60
T
C
T
= −30_C
C
η
= −30_C
D
25_C
25_C
80
100
85_C
85_C
85_C
25_C
100
100
60
50
40
30
20
10
0
50
40
30
20
10
0
−50
−55
−60
−65
−70
−75
−80
−85
−55
−60
−65
−70
−75
−80
−85
—
5
4
3
2
1
0
1900
0
1930 - 1990 MHz
SR @ 400 kHz
SR @ 600 kHz
V
f = 1960 MHz, EDGE Modulation
Figure 10. Spectral Regrowth at 400 kHz and
DD
1920
V
I
Figure 12. Spectral Regrowth at 600 kHz
DQ
DD
= 28 Vdc, I
= 700 mA
1920
= 28 Vdc
Figure 8. EVM versus Frequency
20
600 kHz versus Frequency
DQ
P
44 W Avg.
versus Output Power
out
1940
1940
= 700 mA
, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
61 W Avg.
P
f, FREQUENCY (MHz)
out
40
44 W Avg.
20 W Avg.
= 61 W Avg.
1960
1960
Freescale Semiconductor
20 W Avg.
60
T
1980
C
= −30_C
P
V
I
f = 1960 MHz
EDGE Modulation
DQ
RF Device Data
out
DD
1980
44 W Avg.
20 W Avg.
= 700 mA
= 61 W Avg.
= 28 Vdc
80
2000
25_C
85_C
2000
2020
100