MRF7P20040HSR5 Freescale Semiconductor, MRF7P20040HSR5 Datasheet

no-image

MRF7P20040HSR5

Manufacturer Part Number
MRF7P20040HSR5
Description
MOSFET RF N-CH 40W NI780HS-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7P20040HSR5

Transistor Type
2 N-Channel (Dual)
Frequency
2.03GHz
Gain
18.2dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
150mA
Voltage - Test
32V
Power - Output
10W
Package / Case
NI-780HS-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF7P20040HSR5
Manufacturer:
FREESCALE
Quantity:
1 400
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
2200 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW
• Typical P
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 2. Thermal Characteristics
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 1800 to
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/-
I
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
and Common Source S--Parameters
Operation
For R5 Tape and Reel option, see p. 15.
DQA
Derate above 25°C
Case Temperature 78°C, 10 W CW, 32 Vdc, I
Case Temperature 82°C, 40 W CW
calculators by product.
Application Notes -- AN1955.
= 150 mA, V
Frequency
2025 MHz
out
@ 3 dB Compression Point ≃ 50 Watts CW
C
Rating
GSB
= 25°C
= 1.5 Vdc, P
(dB)
18.2
G
ps
(2,3)
(1)
Characteristic
, 32 Vdc, I
out
42.6
(%)
η
= 10 Watts Avg., IQ Magnitude
D
DQA
DQA
Symbol
= 150 mA, V
Output PAR
V
V
V
T
CW
T
DSS
T
= 150 mA, V
stg
GS
DD
C
J
(dB)
7.3
out
)
-- 65 to +150
GSB
--0.5, +65
--6.0, +10
(1)
DD
32, +0
Value
GSB
42.4
0.17
150
225
= 1.5 Vdc, 2017.5 MHz
= 32 Volts,
ACPR
(dBc)
--34.8
= 1.5 Vdc, 2017.5 MHz
W/°C
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
(1)
Document Number: MRF7P20040H
RF
RF
MRF7P20040HR3 MRF7P20040HSR3
CASE 465H- -02, STYLE 1
2010- -2025 MHz, 10 W AVG., 32 V
CASE 465M- -01, STYLE 1
inA
inB
MRF7P20040HSR3
MRF7P20040HR3
/V
/V
Symbol
MRF7P20040HSR3
Figure 1. Pin Connections
GSA
MRF7P20040HR3
GSB
R
LATERAL N- -CHANNEL
θJC
RF POWER MOSFETs
NI- -780S- -4
NI- -780- -4
SINGLE W- -CDMA
3
4
(Top View)
Value
1.50
2.11
(3,4)
Rev. 2, 12/2010
1
2 RF
RF
outA
outB
°C/W
Unit
/V
/V
DSA
DSB
1

Related parts for MRF7P20040HSR5

MRF7P20040HSR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/- Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. RF Device Data Freescale Semiconductor = 32 Volts Watts Avg ...

Page 2

... V = 1.5 Vdc, DQA GSB — 35 — — 50 — MHz — 8 — — 70 — MHz — 0.04 — dB — 0.013 — dB/°C — 0.006 — dB/°C RF Device Data Freescale Semiconductor % W W ...

Page 3

... V Chip Capacitors C15, C16 4.7 μ Chip Capacitors C17, C18 10 μ Chip Capacitors C19 0.8 pF Chip Capacitor R1 100 Ω, 1/4 W Chip Resistor R2 Ω, 1/4 W Chip Resistors PCB 0.020″, ε RF Device Data Freescale Semiconductor C11 C12 R3 MRF7P20040H/HS Rev. 1 Description ...

Page 4

... MRF7P20040HR3 MRF7P20040HSR3 4 Single--ended λ λ Quadrature combined λ λ λ λ Doherty 4 4 λ λ λ λ Push--pull Possible Circuit Topologies Figure 3. RF Device Data Freescale Semiconductor ...

Page 5

... RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 150 mA 1.5 Vdc DQA GSB η Single--Carrier W--CDMA D 3.84 MHz Channel Bandwidth ACPR Input Signal PAR = 9 0.01% Probability on CCDF PARC IRL 1900 ...

Page 6

... Efficiency and ACPR versus Output Power Gain IRL Vdc dBm 150 mA DQA V = 1.5 Vdc GSB 1575 1700 1825 1950 2075 2200 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response 60 0 2017.5 MHz 55 --5 -- --15 2025 MHz 40 -- --35 20 --40 -- --50 50 --4 --10 --16 --22 --28 --34 --40 2325 2450 RF Device Data Freescale Semiconductor ...

Page 7

... W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 9 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 9. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal RF Device Data Freescale Semiconductor W- -CDMA TEST SIGNAL 10 0 --10 --20 --30 --40 --50 --60 --ACPR in 3.84 MHz Integrated BW --70 --80 ...

Page 8

... Note: Measured with Carrier side open Test circuit impedance as measured from load drain to ground Test circuit impedance as measured from source gate to ground. Device Input Under Matching Network Test Z Z source load Output Matching Network Output Matching Network RF Device Data Freescale Semiconductor ...

Page 9

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Measurement made on the Class AB, carrier side of the device. RF Device Data Freescale Semiconductor Vdc 150 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle DD DQA f = 2010 MHz f = 2010 MHz f = 2025 MHz INPUT POWER (dBm) in Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 32 V ...

Page 10

... Z Z source load Ω Ω 2.2 -- j9.3 17.6 + j9.5 2.3 -- j11.3 16.1 + j9.8 2.4 -- j13.0 14.2 + j8.9 3.5 -- j17.3 13.8 + j6.2 3.8 -- j20.6 11.5 + j3.9 5.6 -- j25.8 9.6 -- j0.6 Output Device Load Pull Under Tuner Test Z load RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7P20040HR3 MRF7P20040HSR3 11 ...

Page 12

... MRF7P20040HR3 MRF7P20040HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF7P20040HR3 MRF7P20040HSR3 13 ...

Page 14

... MRF7P20040HR3 MRF7P20040HSR3 14 RF Device Data Freescale Semiconductor ...

Page 15

... The R5 tape and reel option for MRF7P20040H and MRF7P20040HS parts will be available for 2 years after release of MRF7P20040H and MRF7P20040HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF7P20040H and MRF7P20040HS in the R3 tape and reel option ...

Page 16

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

Related keywords